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AM27C020-55DC500 PDF预览

AM27C020-55DC500

更新时间: 2024-01-23 01:38:50
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器内存集成电路
页数 文件大小 规格书
43页 1145K
描述
UVPROM, 512MX8, 25ns, CMOS, PBGA52, 12 X 17 MM, 1 MM PITCH, LEAD FREE, ULGA-52

AM27C020-55DC500 技术参数

生命周期:Obsolete零件包装代码:LGA
包装说明:VFLGA,针数:52
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.84
最长访问时间:25 nsJESD-30 代码:R-PBGA-B52
长度:17 mm内存密度:4294967296 bit
内存集成电路类型:UVPROM内存宽度:8
功能数量:1端子数量:52
字数:536870912 words字数代码:512000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512MX8
封装主体材料:PLASTIC/EPOXY封装代码:VFLGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL座面最大高度:0.65 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BUTT端子位置:BOTTOM
宽度:12 mmBase Number Matches:1

AM27C020-55DC500 数据手册

 浏览型号AM27C020-55DC500的Datasheet PDF文件第4页浏览型号AM27C020-55DC500的Datasheet PDF文件第5页浏览型号AM27C020-55DC500的Datasheet PDF文件第6页浏览型号AM27C020-55DC500的Datasheet PDF文件第8页浏览型号AM27C020-55DC500的Datasheet PDF文件第9页浏览型号AM27C020-55DC500的Datasheet PDF文件第10页 
Advance  
FLASH MEMORY  
K9K8G08U1B  
K9F4G08U0B K9F4G08B0B  
PIN DESCRIPTION  
Pin Name  
Pin Function  
DATA INPUTS/OUTPUTS  
I/O0 ~ I/O7  
CLE  
ALE  
CE  
The I/O pins are used to input command, address and data, and to output data during read operations. The I/  
O pins float to high-z when the chip is deselected or when the outputs are disabled.  
COMMAND LATCH ENABLE  
The CLE input controls the activating path for commands sent to the command register. When active high,  
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.  
ADDRESS LATCH ENABLE  
The ALE input controls the activating path for address to the internal address registers. Addresses are  
latched on the rising edge of WE with ALE high.  
CHIP ENABLE  
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and  
the device does not return to standby mode in program or erase operation.  
READ ENABLE  
RE  
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid  
tREA after the falling edge of RE which also increments the internal column address counter by one.  
WRITE ENABLE  
WE  
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of  
the WE pulse.  
WRITE PROTECT  
WP  
The WP pin provides inadvertent program/erase protection during power transitions. The internal high volt-  
age generator is reset when the WP pin is active low.  
READY/BUSY OUTPUT  
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or  
random read operation is in process and returns to high state upon completion. It is an open drain output and  
does not float to high-z condition when the chip is deselected or when outputs are disabled.  
R/B  
POWER  
Vcc  
Vss  
N.C  
VCC is the power supply for device.  
GROUND  
NO CONNECTION  
Lead is not internally connected.  
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.  
Do not leave VCC or VSS disconnected.  
Samsung Confidential  
7

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