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AM1214-200 PDF预览

AM1214-200

更新时间: 2024-11-17 22:34:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波晶体管雷达
页数 文件大小 规格书
4页 60K
描述
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1214-200 数据手册

 浏览型号AM1214-200的Datasheet PDF文件第2页浏览型号AM1214-200的Datasheet PDF文件第3页浏览型号AM1214-200的Datasheet PDF文件第4页 
AM1214-200  
RF & MICROWAVE TRANSISTORS  
L-BAND RADAR APPLICATIONS  
PRELIMINARY DATA  
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
OVERLAY GEOMETRY  
METAL/CERAMIC HERMETIC PACKAGE  
POUT  
200 W MIN. WITH 7.0 dB GAIN  
=
.400 x .500 2LFL (M205)  
hermetically sealed  
ORDER CODE  
BRANDING  
1214-200  
AM1214-200  
PIN CONNECTION  
DESCRIPTION  
The AM1214-200 device is a high power Class  
C transistor specifically designed for L-Band Radar  
pulsed output and driver applications.  
This device is capable of operation over a wide  
range of pulse widths, duty cycles and tempera-  
tures, and wiil tolerate severe mismatch and over-  
drive conditions. Low RF thermal resistance and  
computerized automatic wire bonding techniques  
ensure high reliability and product consistency.  
AM1214-200 is supplied in the BIGPAC hermetic  
metal/ceramic package with internal input/output  
matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
575  
16  
Unit  
Power Dissipation*  
Device Current*  
(TC 100°C)  
W
A
VCC  
TJ  
Collector-Supply Voltage*  
40  
V
°
Junction Temperature (Pulsed RF Operation)  
Storage Temperature  
250  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
°
C/W  
RTH(j-c)  
Junction-Case Thermal Resistance*  
0.26  
*Applies only to rated RF amplifier operation  
1/4  
September 1992  

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