Datasheet > ALR100_10

ALR100_10

更新时间： 2025-08-19 12:50:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	38K
描述
NPN SILICON RF POWER TRANSISTOR

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ALR100_10 数据手册

ALR100

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .400 2L FLG

DESCRIPTION:

The ASI ALR100 is Designed for

1200 – 1400 MHz, L-Band Applications.

.062 x 45°

Ø.120

FEATURES:

• Internal Input/Output Matching Network

• P_G= 6.0 dB at 100 W/1400 MHz

• Omnigold™ Metalization System

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.140 / 3.56

.110 / 2.80

.395 / 10.03

.407 / 10.34

.193 / 4.90

.230 / 5.84

.006 / 0.15

.131 / 3.33

MAXIMUM RATINGS

.003 / 0.08

.118 / 3.00

13.5 A

32 V

I_C

V_CC

P_DISS

T_J

.063 / 1.60

.650 / 16.51

.386 / 9.80

.900 / 22.86

.450 / 11.43

.125 / 3.18

270 W @ T_C= 25 °C

-65 °C to +250 °C

-65 °C to +200 °C

0.55 °^OC/W

.050 / 1.27

.405 / 10.29

.170 / 4.32

.062 / 1.58

T_STG

θ_JC

1 = COLLECTOR

2&3 = BASE

4 = EMITTER

ORDER CODE: ASI10514

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 100 mA

I_E= 10 mA

BV_CES

BV_EBO

I_CES

3.5

_CE= 32 V

_CE= 5.0 V

---

I_C= 5.0 A

h_FE

6.0

P_G

V_CC= 28 V

P_OUT= 100 W

f = 1.2 to 1.4 GHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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