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ALD114935SA PDF预览

ALD114935SA

更新时间: 2024-12-01 04:32:15
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描述
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

ALD114935SA 技术参数

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ALD114935SA 数据手册

 浏览型号ALD114935SA的Datasheet PDF文件第2页 
TM  
ADVANCED  
LINEAR  
®
e
EPAD  
A
DEVICES, INC.  
ALD114835/ALD114935  
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®  
MATCHED PAIR MOSFET ARRAYS  
V
= -3.5V  
GS(th)  
GENERAL DESCRIPTION  
APPLICATIONS  
ALD114835/ALD114935 are monolithic quad/dual N-Channel MOSFETs  
matched at the factory using ALD’s proven EPAD CMOS technology. These  
devices are intended for low voltage, small signal applications. They are excel-  
lent functional replacements for normally-closed relay applications, as they are  
normally on (conducting) without any power applied, but could be turned off or  
modulated when system power supply is turned on. These MOSFETs have the  
unique characteristics of, when the gate is grounded, operating in the resis-  
tance mode for low drain voltage levels and in the current source mode for  
higher voltage levels and providing a constant drain current.  
• Functional replacement of Form B (NC) relay  
• Zero power fail safe circuits  
• Backup battery circuits  
• Power failure detector  
• Fail safe signal detector  
• Source followers and buffers  
• Precision current mirrors  
• Precision current sources  
• Capacitives probes  
• Sensor interfaces  
ALD114835/ALD114935 MOSFETs are designed for exceptional device elec-  
trical characteristics matching. As these devices are on the same monolithic  
chip, they also exhibit excellent temperature tracking characteristics. They are  
versatile as design components for a broad range of analog applications such  
as basic building blocks for current sources, differential amplifier input stages,  
transmission gates, and multiplexer applications. Besides matched pair electri-  
cal characteristics, each individual MOSFET also exhibits well controlled pa-  
rameters, enabling the user to depend on tight design limits. Even units from  
different batches and different date of manufacture have correspondingly well  
matched characteristics.  
• Charge detectors  
• Charge integrators  
• Differential amplifier input stage  
• High side switches  
• Peak detectors  
• Sample and Hold  
• Alarm systems  
• Current multipliers  
• Analog switches  
• Analog multiplexers  
• Voltage comparators  
• Level shifters  
These depletion mode devices are built for minimum offset voltage and differ-  
ential thermal response, and they are designed for switching and amplifying  
applications in single 5V to +/-5V systems where low input bias current, low  
input capacitance and fast switching speed are desired. These devices exhibit  
well controlled turn-off and sub-threshold charactersitics and therefore can be  
used in designs that depend on sub-threshold characteristics.  
PIN CONFIGURATION  
ALD114835  
-
-
V
V
1
2
3
4
5
6
7
8
N/C*  
16  
15  
14  
13  
12  
11  
10  
9
N/C*  
TheALD114835/ALD114935 are suitable for use in precision applications which  
require very high current gain, beta, such as current mirrors and current sources.  
A sample calculation of the DC current gain at a drain current of 3mA and gate  
input leakage current of 30pA = 100,000,000. It is recommended that the user,  
for most applications, connect V+ pin to the most positive voltage potential (or  
left open unused) and V- and N/C pins to the most negative voltage potential  
in the system. All other pins must have voltages within these voltage limits.  
G
G
N2  
N1  
M 2  
M 1  
D
D
N1  
N2  
+
+
V
V
S
12  
-
-
V
S
V
34  
D
D
N3  
N4  
M 4  
M 3  
FEATURES  
G
N4  
G
N3  
• Depletion mode (normally ON)  
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V  
N/C*  
N/C*  
-
-
V
V
• Nominal R  
V
=0.0V of 540Ω  
DS(ON) @ GS  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
• Low input capacitance  
PC, SC PACKAGES  
ALD114935  
• V  
match (V ) — 20mV  
GS(th)  
OS  
• High input impedance — 1012typical  
-
-
V
V
• Positive, zero, and negative V  
• DC current gain >108  
temperature coefficient  
GS(th)  
1
2
3
4
8
7
6
5
N/C*  
N/C*  
• Low input and output leakage currents  
G
G
N1  
N2  
M 1  
M 2  
ORDERING INFORMATION  
D
D
N1  
N2  
Operating Temperature Range*  
0°C to +70°C 0°C to +70°C  
-
-
S
12  
V
V
16-Pin  
Plastic Dip  
16-Pin  
SOIC  
8-Pin  
Plastic Dip  
8-Pin  
SOIC  
PA, SA PACKAGES  
Package  
Package  
Package  
Package  
*N/C pins are internally connected.  
Connect to V- to reduce noise  
ALD114835PC ALD114835SC ALD114935PA  
ALD114935SA  
* Contact factory for industrial temp. range or user-specified threshold voltage values  
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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