Datasheet > ALD111933MAL

ALD111933MAL

更新时间： 2024-01-12 14:31:25

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
2页	411K
描述
DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

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ALD111933MAL 技术参数

是否无铅：	不含铅	生命周期：	Contact Manufacturer
包装说明：	SMALL OUTLINE, R-PDSO-G8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.18
Is Samacsys：	N	配置：	COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	10.6 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

ALD111933MAL 数据手册

DVANCED

INEAR

EVICES, INC.

EPAD

ALD111933

DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

MATCHED PAIR MOSFET ARRAY

= +3.3V

GS(th)

APPLICATIONS

GENERAL DESCRIPTION

ALD111933 are monolithic dual N-Channel MOSFETs matched at the

factory usingALD’s proven EPAD® CMOS technology. These devices are

intended for low voltage, small signal applications.

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches

• Low current voltage clamps

• Voltage detectors

• Capacitive probes

• Sensor interfaces

ALD111933 MOSFETs are designed and built with exceptional device

electrical characteristics matching. Since these devices are on the same

monolithic chip, they also exhibit excellent tempco tracking characteris-

tics. Each device is versatile as a circuit element and is a useful design

component for a broad range of analog applications. They are basic build-

ing blocks for current sources, differential amplifier input stages, transmis-

sion gates, and multiplexer applications. For most applications, connect

V- and N/C pins to the most negative voltage potential in the system. All

other pins must have voltages within these voltage limits.

The ALD111933 devices are built for minimum offset voltage and differen-

tial thermal response, and they are designed for switching and amplifying

applications in +3.0V to +10V systems where low input bias current, low

input capacitance and fast switching speed are desired. Since these are

MOSFET devices, they feature very large (almost infinite) current gain in

a low frequency, or near DC, operating environment.

• Peak detectors

• Level shifters

• Multiple preset voltage hysteresis circuits

(with other V (th) EPAD MOSFETS)

• Energy harvesting circuits

• Zero standby power voltage monitors

The ALD111933 are suitable for use in precision applications which re-

quire very high current gain, beta, such as current mirrors and current

sources. The high input impedance and the high DC current gain of the

Field Effect Transistors result in extremely low current loss through the

control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example, DC

beta of the device at a drain current of 3mA and input leakage current of

30pA at 25°C is = 3mA/30pA = 100,000,000.

PIN CONFIGURATION

ALD111933

FEATURES

• Enhancement-mode (normally off)

N/C*

• Standard Gate Threshold Voltages: +3.3V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• V

match to 20mV

GS(th)

• High input impedance — 10¹²Ω typical

• Positive, zero, and negative V

• DC current gain >10⁸

temperature coefficient

GS(th)

• Low input and output leakage currents

MA, PA, SA PACKAGES

ORDERING INFORMATION (“L”suffix for lead free version)

*N/C pin is internally connected.

Connect to V- to reduce noise

Operating Temperature Range*

0°C to +70°C

8-Pin

Plastic Dip

Package

MSOP

Package

SOIC

Package

ALD111933PAL

ALD111933MAL ALD111933SAL

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

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与ALD111933MAL相关器件

型号	品牌	获取价格	描述	数据表
ALD111933PAL	ALD	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD111933SAL	ALD	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
ALD112	NAIS	获取价格	1 Form A Slim Power Relay
ALD112	PANASONIC	获取价格	Power/Signal Relay, 1 Form A, SPST, Momentary, 0.017A (Coil), 12VDC (Coil), 200mW (Coil),
ALD1121E	ALD	获取价格	QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
ALD1121E_12	ALD	获取价格	QUAD/DUAL EPADÂ® PRECISION N-CHANNEL MATCHED
ALD1121EDA	ALD	获取价格	QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
ALD1121EPA	ALD	获取价格	QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
ALD1121EPAL	ALD	获取价格	QUAD/DUAL EPADÂ® PRECISION N-CHANNEL MATCHED
ALD1121ESA	ALD	获取价格	QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY

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