AL5809Q
Absolute Maximum Ratings
Symbol
VINOUT
IINOUT
Parameter
Rating
80
Unit
V
“\” Voltage Relative to “OUT” Pin
LED Current from “In” to “OUT”
Human Body Model ESD Protection
Machine Model ESD Protection
Charged Device Model ESD Protection
Operating Junction Temperature
Storage Temperature
180
mA
V
ESD HBM
ESD MM
ESD CDM
TJ
4,000
400
V
1,000
V
-40 to +175
-55 to +150
°C
°C
TST
Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Package Thermal Data
θJC
θJA
PDIS
Package
Thermal Resistance
Junction-to-Case
Thermal Resistance
Junction-to-Ambient
TA = +25°C, TJ = +150°C
PowerDI123 (Type B)
PowerDI123 (Type B)
27.15°C/W
17.81°C/W
148.6°C/W (Note 5)
81.4°C/W (Note 6)
0.84W
1.53W
Notes:
5. Test condition for PowerDI123 (Type B): Device mounted on 25.4mm x 25.4mm FR-4 PCB (10mm x 10mm 1oz copper, minimum recommended pad
layout on top layer and thermal vias to bottom layer ground plane). For better thermal performance, larger copper pad for heatsink is needed.
6. When mounted on 50.8mm x 50.8mm GETEK PCB with 25.4mm x 25.4mm copper pads.
Recommended Operating Conditions (Note 8)
Symbol
VINOUT
IINOUT
tPWM(ON)
tPWM(OFF)
TJ
Parameter
Min
2.5
15
Max
60
Unit
V
“IN” Voltage Range Relative to “OUT” Pin (Notes 7 and 8)
LED Current (Note 9)
150
—
mA
PWM pulse width in dimming mode on-time
500
500
-40
µs
PWM pulse width in dimming mode on-time
—
Operating Junction Temperature Range (Note 8)
Operating Ambient Temperature Range AEC-Q100 Grade 3 (Note 8)
Operating Ambient Temperature Range AEC-Q100 Grade 1 (Note 8)
+150
°C
°C
°C
-40
-40
+85
TA
+125
TA
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www.diodes.com
August 2017
© Diodes Incorporated
AL5809Q
Document number: DS38233 Rev. 2 - 2