AIDK16S65C5
CoolSiC™ Automotive Schottky Diode 650V G5
650V/16A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins)
Features
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Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Junction Temperature range from -40°C to 175°C
System efficiency improvement over Si diodes
System cost/size savings due to reduced cooling requirements
Enabling higher frequency/increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Potential Applications
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Booster/DCDC Converter
On board Charger/PFC
Product Validation
“Qualified for Automotive Applications. Product Validation according to AEC-Q100/101”
Description
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for
Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this
family of products shows improved efficiency over all load conditions resulting from both its thermal
characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s
IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in the 650V
voltage class.
Product Information
Parameter Value/Unit
Pin
Pin 1, case Cathode
Pin 2 Anode
Definition
VDC,max
Ordering Code
Marking
650 V
16 A
AIDK16S65C5
AD1665C5
IF; TC< 124 °C
QC; VR= 400 V
EC; VR= 400 V
Tj,max
Package
23 nC
5.3 μJ
175 °C
PG-TO263-2-1
SP001725240
SP Number
Datasheet
Please read the Important Notice and Warnings at the end of this document
V3.0
www.infineon.com
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21.07.2021