Datasheet > AGR19125E

AGR19125E

更新时间： 2024-01-05 20:44:41

品牌	Logo	应用领域
TRIQUINT		晶体晶体管过程控制系统 PCS
页数	文件大小	规格书
10页	369K
描述
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

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AGR19125E 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	包装说明：	FLATPACK, R-CDFP-F2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
其他特性：	HIGH RELIABILITY	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-CDFP-F2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLATPACK	峰值回流温度（摄氏度）：	225
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	350 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

AGR19125E 数据手册

AGR19125E

125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

Table 1. Thermal Characteristics

Introduction

Parameter

Sym

Value

Unit

The AGR19125E is a 125 W, 28 V N-channel later-

ally diffused metal oxide semiconductor (LDMOS)

RF power field effect transistor (FET) suitable for

personal communication service (PCS)

(1930 MHz—1990 MHz), time-division multiple

access (TDMA), and single-carrier or multicarrier

class AB power amplifier applications.

Thermal Resistance,

Junction to Case:

AGR19125EU

Rı JC

0.5

°C/W

AGR19125EF

Table 2. Absolute Maximum Ratings*

Parameter

Drain-source Voltage

Gate-source Voltage

Sym Value Unit

65 Vdc

VGS –0.5, +15 Vdc

VDSS

Total Dissipation at TC = 25 °C:

AGR19125EU

350

AGR19125EF

AGR19125EU (unflanged)

AGR19125EF (flanged)

Derate Above 25 °C:

AGR19125EU

AGR19125EF

—

2.0

W/°C

°C

Figure 1. Available Packages

Operating Junction Tempera-

ture

200

Features

Storage Temperature Range

TSTG –65, +150 °C

Typical 2 carrier, N-CDMA performance for

V^DD= 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,

F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,

traffic channels 8—13) 1.2288 MHz channel

bandwidth (BW). Adjacent channels measured

over a 30 kHz BW at F1 – 0.885 MHz and

F2 + 0.885 MHz. Intermodulation distortion

products measured over a 1.2288 MHz BW at

F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average

(P/A) = 9.72 dB at 0.01% probability on CCDF:

— Output power: 24 W.

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Table 3. ESD Rating*

AGR19125E

HBM

Minimum (V)

Class

500

— Power gain: 15 dB.

— Efficiency: 24%.

CDM

1500

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

— ACPR: –48 dBc.

— IMD3: –34 dBc.

— Return loss: –10 dB.

PEAK Devices

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-

uous wave (CW) output power.

Large signal impedance parameters available.

12 3 4 5 6 7...10

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与AGR19125E相关器件

型号	品牌	描述	获取价格	数据表
AGR19125EF	TRIQUINT	125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19125EU	TRIQUINT	125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR19180EF	TRIQUINT	180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor	获取价格
AGR21030EF	TRIQUINT	30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格
AGR21045EF	TRIQUINT	45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格
AGR21060E	TRIQUINT	60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格

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