5秒后页面跳转
捷配首页

Datasheet > AGR21125EU
AGR21125EU PDF预览

AGR21125EU

更新时间： 2024-01-24 02:28:49
品牌 Logo 应用领域
TRIQUINT 晶体晶体管电子放大器
页数 文件大小 规格书
9页 343K
描述
125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

阅读下载

获取价格

AGR21125EU 技术参数

生命周期：Active包装说明：FLATPACK, R-CDFP-F2
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.4其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-CDFP-F2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：225极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：350 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管应用：AMPLIFIER晶体管元件材料：SILICON

AGR21125EU 数据手册

 浏览型号AGR21125EU的Datasheet PDF文件第2页浏览型号AGR21125EU的Datasheet PDF文件第3页浏览型号AGR21125EU的Datasheet PDF文件第4页浏览型号AGR21125EU的Datasheet PDF文件第5页浏览型号AGR21125EU的Datasheet PDF文件第6页浏览型号AGR21125EU的Datasheet PDF文件第7页 
AGR21125E  
125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET  
Table 1. Thermal Characteristics  
Introduction  
Parameter  
Sym  
Value  
Unit  
The AGR21125E is a high-voltage, gold-metalized,  
enhancement mode, laterally diffused metal oxide  
semiconductor (LDMOS) RF power transistor suit-  
able for wideband code division multiple access  
(W-CDMA), single and multicarrier class AB wireless  
base station power amplifier applications.  
Thermal Resistance,  
Junction to Case:  
AGR21125EU  
Rı JC  
Rı JC  
0.5  
0.5  
°C/W  
°C/W  
AGR21125EF  
Table 2. Absolute Maximum Ratings*  
Parameter  
Drain-source Voltage  
Gate-source Voltage  
Sym Value Unit  
65 Vdc  
VGS –0.5, +15 Vdc  
VDSS  
48  
5
Total Dissipation at TC = 25 °C:  
AGR21125EU  
AGR21125EU (unflanged)  
AGR21125EF (flanged)  
PD  
PD  
350  
350  
W
W
AGR21125EF  
Derate Above 25 ˇC:  
AGR21125EU  
AGR21125EF  
Operating Junction Tempera-  
ture  
Figure 1. Available Packages  
—
—
TJ  
2.0  
2.0  
200  
W/°C  
W/°C  
°C  
Features  
Typical performance for two carrier 3GPP  
W-CDMA systems. F1 = 2135 MHz and  
F2 = 2145 MHz with 3.84 MHz channel BW, adja-  
cent channel BW = 3.84 MHz at F1 – 5 MHz and  
F2 + 5 MHz. Third-order distortion is measured  
over 3.84 MHz BW at F1 – 10 MHz and  
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%  
(probability) CCDF:  
Storage Temperature Range  
TSTG –65, +150 °C  
* Stresses in excess of the absolute maximum ratings can cause  
permanent damage to the device. These are absolute stress rat-  
ings only. Functional operation of the device is not implied at  
these or any other conditions in excess of those given in the  
operational sections of the data sheet. Exposure to absolute  
maximum ratings for extended periods can adversely affect  
device reliability.  
Table 3. ESD Rating*  
— Output power: 28 W.  
— Power gain: 14 dB.  
— Efficiency: 27%.  
— IM3: –34.5 dBc.  
— ACPR: –38 dBc.  
AGR21125E  
HBM  
Minimum (V)  
Class  
1B  
A
500  
50  
MM  
— Return loss: –10 dB.  
CDM  
1500  
4
High-reliability, gold-metalization process.  
Low hot carrier injection (HCI) induced bias drift  
over 20 years.  
* Although electrostatic discharge (ESD) protection circuitry has  
been designed into this device, proper precautions must be  
taken to avoid exposure to ESD and electrical overstress (EOS)  
PEAK Devices  
during all handling, assembly, and test operations.
employs a human-body model (HBM), a machine model (MM),  
and a charged-device model (CDM) qualification requirement in  
order to determine ESD-susceptibility limits and protection  
design evaluation. ESD voltage thresholds are dependent on the  
circuit parameters used in each of the models, as defined by  
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and  
JESD22-C101A (CDM) standards.  
Internally matched.  
High gain, efficiency, and linearity.  
Integrated ESD protection.  
Device can withstand a 10:1 voltage standing wave  
ratio (VSWR) at 28 Vdc, 2140 MHz, 125 W contin-  
uous wave (CW) output power.  
Caution: MOS devices are susceptible to damage from elec-  
trostatic charge. Reasonable precautions in han-  
dling and packaging MOS devices should be  
observed.  
Large signal impedance parameters available.  
1234567...9

下载PDF

与AGR21125EU相关器件

型号 品牌 描述 获取价格 数据表
AGR21180EF TRIQUINT 180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格
AGR26045EF TRIQUINT 45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格
AGR26125E TRIQUINT 125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格
AGR26125EF TRIQUINT 125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格
AGR26125EU TRIQUINT 125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格
AGR26180EF TRIQUINT 180 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET

获取价格

与AGR21125EU相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证