Datasheet > AGR26125E

AGR26125E

更新时间： 2024-02-10 07:27:26

品牌	Logo	应用领域
TRIQUINT		电子
页数	文件大小	规格书
9页	367K
描述
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET

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AGR26125E 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
其他特性：	HIGH RELIABILITY	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	S BAND
JESD-30 代码：	R-CDFP-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLATPACK	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

AGR26125E 数据手册

AGR26125E

125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET

Table 1. Thermal Characteristics

Introduction

Parameter

Sym

Value

Unit

The AGR26125E is a high-voltage, gold-metalized,

enhancement mode, laterally diffused metal oxide

semiconductor (LDMOS) RF power transistor suit-

able for ultrahigh-frequency (UHF) applications

including multichannel multipoint distribution service

(MMDS) for broadcasting and communications.

Thermal Resistance,

Junction to Case:

AGR26125EU

Rı JC

0.5

°C/W

AGR26125EF

Table 2. Absolute Maximum Ratings*

Parameter

Drain-source Voltage

Gate-source Voltage

Sym Value Unit

65 Vdc

VGS –0.5, +15 Vdc

VDSS

5B 03 STYLE 1

Total Dissipation at TC = 25 °C:

AGR26125EU

AGR26125EU (unflanged) AGR26125EF (flanged)

350

AGR26125EF

Figure 1. Available Packages

Derate Above 25 °C:

AGR26125EU

AGR26125EF

—

2.0

200

W/°C

°C

Features

Operating Junction Tempera-

ture

Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W

Typical performance for MMDS systems.

f = 2600 MHz, IDQ = 1300 mA, Vds = 28 V,

adjacent channel BW = 3.84 MHz, 5 MHz offset;

alternate channel BW = 3.84 MHz, 10 MHz offset.

Typical P/A ratio of 9.8 dB at 0.01% (probability)

CCDF*:

Storage Temperature Range

TSTG –65, +150 °C

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

— Output power: 20 W

— Power gain: 11.5 dB.

— Power Added Efficiency (PAE): 19%.

— ACLR1: –35 dBc.

— ACLR2: –37 dBc.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Table 3. ESD Rating*

AGR26125E

HBM

Minimum (V)

Class

500

CDM

1500

Internally matched.

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W contin-

uous wave (CW) output power.

PEAK Devices

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

Large signal impedance parameters available.

*The test signal utilized is 4-channel W-CDMA Test Model 1. This

test signal provides an equivalent reference (occupied bandwidth

and waveform EPF) for the actual performance with an MMDS

waveform.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

12 3 4 5 6 7...9

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与AGR26125E相关器件

型号	品牌	描述	获取价格	数据表
AGR26125EF	TRIQUINT	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格
AGR26125EU	TRIQUINT	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格
AGR26180EF	TRIQUINT	180 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET	获取价格
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