Datasheet > AGR18125EU

AGR18125EU

更新时间： 2024-02-07 22:25:18

品牌	Logo	应用领域
TRIQUINT		晶体晶体管放大器
页数	文件大小	规格书
6页	358K
描述
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

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AGR18125EU 技术参数

AGR18125E

Product Brief

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

Package Dimensions

All dimensions are in inches. Tolerances are ±0.005 in. unless specified.

AGR18125EU

PINS:

1. DRAIN

2. GATE

3. SOURCE

_PA_{EAK DEVICES}

M-AGR21125U

AGR18125XU

YYWWLL XXXXX

YYWWUR

ZZZZZZZ

AGR18125EF

PINS:

1. DRAIN

2. GATE

3. SOURCE

M-^PA^EAG^KR^DE2^V1^IC1^E2^S5F

AGR18125XF

YYWWLL XXXXX

YYWWUR

Z^ZZ^ZZ^ZZZ^ZZ^ZZZZ

Label Notes:

■ M before the part number denotes model program. X before the part number denotes engineering prototype.

■ The last two letters of the part number denote wafer technology and package type.

■ YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).

XXXXX = five-digit wafer lot number.

■ ZZZZZZZ = seven-digit assembly lot number on production parts.

■ ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.

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