Datasheet > AGR19030EF

AGR19030EF

更新时间： 2024-02-17 07:50:34

品牌	Logo	应用领域
TRIQUINT		晶体晶体管过程控制系统 PCS 放大器局域网
页数	文件大小	规格书
10页	329K
描述
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

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AGR19030EF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.39
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	87.5 W
子类别：	FET General Purpose Power	Base Number Matches：	1

AGR19030EF 数据手册

AGR19030EF

30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

Introduction

GSM Features

Typical performance over entire GSM band:

— P1dB: 30 W typical.

— Continuous wave (CW) power gain: @ P1dB =

15 dB.

— CW efficiency @ P1dB = 55% typical.

— Return loss: –12 dB.

The AGR19030EF is a 30 W, 28 V N-channel later-

ally diffused metal oxide semiconductor (LDMOS) RF

power field effect transistor (FET) suitable for per-

sonal communication service (PCS) (1930 MHz—

1990 MHz), global system for mobile communication

(GSM/EDGE), time division multiple access (TDMA),

and single-carrier or multicarrier class AB power

amplifier applications.

Device Performance Features

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Figure 1. AGR19030EF (flanged) Package

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

N-CDMA Features

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW

output power.

Typical 2 carrier N-CDMA performance: VDD =

28 V, I^DQ= 350 mA, f1 = 1958.75 MHz, f2 =

1961.25 MHz, IS-95 CDMA (pilot, sync, paging,

traffic codes 8—13). Peak/average (P/A) = 9.72 dB

at 0.01% probability on CCDF. 1.2288 MHz trans-

mission bandwidth (BW). Adjacent channel power

ratio (ACPR) measured over 30 kHz BW at f1 –

885 kHz and f2 + 885 kHz. Third-order intermodu-

lation distortion (IM3) measured over a

1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.

— Output power (P^OUT): 6 W.

Large signal impedance parameters available.

ESD Rating*

AGR19030EF

HBM

Minimum (V)

Class

500

— Power gain: 16 dB.

— Efficiency: 24.8%.

— IM3: –34.5 dBc.

CDM

1500

— ACPR: –49 dBc.

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

PEAK Devices

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

EDGE Features

Typical EDGE performance, 1960 MHz, 26 V,

I^DQ= 250 mA:

— Output power (P^OUT): 12 W typical.

— Power gain: 15.5 dB.

— Efficiency: 38% typical.

— Modulation spectrum:

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

@ ±400 kHz = –61 dBc.

@ ±600 kHz = –74 dBc.

— Error vector magnitude (EVM) = 2.2%

12 3 4 5 6 7...10

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