Datasheet > AGR09045EU

AGR09045EU

更新时间： 2024-11-28 06:36:47

品牌	Logo	应用领域
TRIQUINT		晶体晶体管电子放大器
页数	文件大小	规格书
7页	310K
描述
45 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET

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AGR09045EU 数据手册

AGR09045E

45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET

Table 1. Thermal Characteristics

Introduction

Parameter

Sym

Value

Unit

The AGR09045E is a high-voltage, gold-metalized,

laterally diffused metal oxide semiconductor

Thermal Resistance,

Junction to Case:

AGR09045EU

(LDMOS) RF power transistor suitable for cellular

band, code-division multiple access (CDMA), global

system for mobile communication (GSM), enhanced

data for global evolution (EDGE), and time-division

multiple access (TDMA) single and multicarrier class

AB wireless base station amplifier applications. This

device is manufactured on an advanced LDMOS

technology, offering state-of-the-art performance,

reliability, and thermal resistance. Packaged in an

industry-standard CuW package capable of deliver-

ing a minimum output power of 45 W, it is ideally

suited for today's RF power amplifier applications.

R JC

1.2

1.5

°C/W

AGR09045EF

Table 2. Absolute Maximum Ratings*

Parameter

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Total Dissipation at TC = 25 °C:

AGR09045EU

Sym Value Unit

65 Vdc

VGS –0.5, +15 Vdc

VDSS

4.25

Adc

146

117

AGR09045EF

Derate Above 25 °C:

AGR09045EU

AGR09045EF

Operating Junction Tempera-

ture

—

0.83 W/°C

0.67 W/°C

200

°C

Storage Temperature Range

TSTG –65, +150 °C

AGR09045EU (unflanged)

AGR09045EF (flanged)

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Figure 1. Available Packages

Features

Table 3. ESD Rating*

Typical performance ratings are for IS-95 CDMA,

pilot, sync, paging, traffic codes 8—13:

— Output power (POUT): 10 W.

— Power gain: 20 dB.

AGR09045E

HBM

Minimum (V)

Class

500

— Efficiency: 28%.

— Adjacent channel power ratio (ACPR) for

30 kHz bandwidth (BW):

(750 kHz offset: –45 dBc)

(1.98 MHz offset: –60 dBc).

— Input return loss: 10 dB.

CDM

1500

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

PEAK Devices

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

High-reliability, gold-metalization process.

High gain, efficiency, and linearity.

Integrated ESD protection.

Si LDMOS.

Industry-standard packages.

45 W minimum output power.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

12 3 4 5 6 7

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与AGR09045EU相关器件

型号	品牌	获取价格	描述	数据表
AGR09070EF	TRIQUINT	获取价格	70 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09085E	TRIQUINT	获取价格	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09085EF	TRIQUINT	获取价格	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09085EU	TRIQUINT	获取价格	85 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09090EF	TRIQUINT	获取价格	90 W, 865 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130E	TRIQUINT	获取价格	130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130EF	TRIQUINT	获取价格	130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09130EU	TRIQUINT	获取价格	130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09180EF	TRIQUINT	获取价格	180 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR18030EF	TRIQUINT	获取价格	30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

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