Datasheet > AGR18060EF

AGR18060EF

更新时间： 2024-11-09 06:36:47

品牌	Logo	应用领域
TRIQUINT		晶体晶体管
页数	文件大小	规格书
9页	401K
描述
60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AGR18060EF 数据手册

AGR18060E

60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor

Table 1. Thermal Characteristics

Introduction

Parameter

Thermal Resistance,

Junction to Case:

AGR18060EU

Sym

Value

Unit

The AGR18060E is a 60 W, 26 V N-channel laterally

diffused metal oxide semiconductor (LDMOS)

RF power field effect transistor (FET) suitable for

enhanced data for global evolution (EDGE), global

system for mobile communication (GSM), and single-

carrier or multicarrier class AB power amplifier appli-

cations. It is packaged in an industry-standard pack-

age and is capable of delivering a minimum output

power of 60 W, which makes it ideally suited for

today’s wireless base station RF power amplifier

applications.

1.00

°C/W

Rı JC

AGR18060EF

Table 2. Absolute Maximum Ratings*

Parameter

Sym Value Unit

V^DSS65 Vdc

V^GS–0.5, 15 Vdc

Drain-source Voltage

Gate-source Voltage

Total Dissipation at T^C= 25 °C:

AGR18060EU

P^D

175

AGR18060EF

Derate Above 25 ˇC:

AGR18060EU

AGR18060EF

—

T^J

1.00

200

W/°C

°C

AGR18060EU AGR18060EF

Figure 1. Available Packages

Operating Junction Tempera-

ture

Storage Temperature Range

T^STG–65, 150 °C

Features

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Typical EDGE performance:

1880 MHz, 26 V, I^DQ= 500 mA

— Output power (P^OUT): 20 W.

— Power gain: 15 dB.

— Efficiency: 34%.

— Modulation spectrum:

@ ±400 kHz = –62 dBc.

@ ±600 kHz = –73 dBc.

— Error vector magnitude (EVM) = 2%.

Table 3. ESD Rating*

Minimum (V)

Class

AGR18060E

HBM

500

Typical performance over entire GSM band:

— P1dB: 60 W typ.

CDM

1500

— Power gain: @ P1dB = 14 dB.

— Efficiency @ P1dB = 52% typical.

— Return loss: –10 dB.

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

PEAK Devices

during all handling, assembly, and test operations. Agere

High-reliability, gold-metalization process.

employs both a human-body model (HBM) and a charged-device

model (CDM) qualification requirement in order to determine

ESD-susceptibility limits and protection design evaluation. ESD

voltage thresholds are dependent on the circuit parameters used

in each of the models, as defined by JEDEC's JESD22-A114

(HBM) and JESD22-C101 (CDM) standards.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continu-

ous wave (CW) output power.

Large signal impedance parameters available.

12 3 4 5 6 7...9

中文翻译

下载PDF

与AGR18060EF相关器件

型号	品牌	获取价格	描述	数据表
AGR18060EU	TRIQUINT	获取价格	60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
AGR18090E	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18090EF	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18090EU	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125E	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125EF	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125EU	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR19030EF	TRIQUINT	获取价格	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF	TRIQUINT	获取价格	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19060E	TRIQUINT	获取价格	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

与AGR18060EF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

48
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

AGR18060EF

AGR18060EF 数据手册

与AGR18060EF相关器件

与AGR18060EF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AGR18060EF

AGR18060EF 数据手册

与AGR18060EF相关器件

与AGR18060EF相关文章

您还可以找

您在本页遇到什么问题？