Datasheet > AGR18125EU

AGR18125EU

更新时间： 2024-01-11 05:50:02

品牌	Logo	应用领域
TRIQUINT		晶体晶体管放大器
页数	文件大小	规格书
6页	358K
描述
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

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AGR18125EU 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	65 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	L BAND	JESD-30 代码：	R-PDFP-F2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLATPACK
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

AGR18125EU 数据手册

Product Brief

AGR18125E

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

Table 1. Thermal Characteristics

Introduction

Parameter

Thermal Resistance,

Junction to Case:

AGR18125EU

Sym

Value

Unit

The AGR18125E is a 125 W, 26 V, N-channel gold-

metallized, laterally diffused metal oxide semicon-

ductor (LDMOS) RF power field effect transistor

(FET) suitable for global system for mobile communi-

cation (GSM), enhanced data for global evolution

(EDGE), and multicarrier class AB power amplifier

applications. This device is manufactured using

advanced LDMOS technology offering state-of-the-

art performance and reliability. It is packaged in an

industry-standard package and is capable of deliver-

ing a minimum output power of 125 W which makes

it ideally suited for today’s RF power amplifier appli-

cations.

R^ıJC

Rı JC

0.5

°C/W

AGR18125EF

Table 2. Absolute Maximum Ratings*

Parameter

Drain-source Voltage

Gate-source Voltage

Total Dissipation at TC = 25 °C:

AGR18125EU

Sym Value Unit

65 Vdc

VGS –0.5, 15 Vdc

VDSS

350

AGR18125EF

Derate Above 25 °C:

AGR18125EU

AGR18125EF

—

2.0

W/°C

Operating Junction Tempera-

ture

200

°C

5B 03 STYLE

AGR18125EU (unflanged)

AGR18125EF (flanged)

Storage Temperature Range

TSTG –65, 150 °C

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Figure 1. Available Packages

Features

Typical performance ratings for GSM EDGE

(f = 1.840 GHz, POUT = 50 W)

— Modulation spectrum:

@ ± 400 kHz = –60 dBc.

@ ± 600 kHz = –72 dBc.

Typical performance over entire digital communi-

cation system (DCS) band:

Table 3. ESD Rating*

AGR18125E

HBM

Minimum (V)

Class

500

1500

CDM

— P1dB: 125 W typical (typ).

— Power gain: @ P1dB = 13.5 dB.

— Efficiency: @ P1dB = 50% typ.

— Return loss: –10 dB.

High-reliability, gold-metallization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

PEAK Devices

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

Internally matched.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

High gain, efficiency, and linearity.

Integrated ESD protection.

125 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 1.840 GHz, 125 W contin-

uous wave (CW) output power.

Large signal impedance parameters available.

12 3 4 5 6

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