Datasheet > AGR18060E

AGR18060E

更新时间： 2024-11-09 06:36:47

品牌	Logo	应用领域
TRIQUINT		晶体晶体管
页数	文件大小	规格书
9页	401K
描述
60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor

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AGR18060E 数据手册

AGR18060E

60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor

Table 1. Thermal Characteristics

Introduction

Parameter

Thermal Resistance,

Junction to Case:

AGR18060EU

Sym

Value

Unit

The AGR18060E is a 60 W, 26 V N-channel laterally

diffused metal oxide semiconductor (LDMOS)

RF power field effect transistor (FET) suitable for

enhanced data for global evolution (EDGE), global

system for mobile communication (GSM), and single-

carrier or multicarrier class AB power amplifier appli-

cations. It is packaged in an industry-standard pack-

age and is capable of delivering a minimum output

power of 60 W, which makes it ideally suited for

today’s wireless base station RF power amplifier

applications.

1.00

°C/W

Rı JC

AGR18060EF

Table 2. Absolute Maximum Ratings*

Parameter

Sym Value Unit

V^DSS65 Vdc

V^GS–0.5, 15 Vdc

Drain-source Voltage

Gate-source Voltage

Total Dissipation at T^C= 25 °C:

AGR18060EU

P^D

175

AGR18060EF

Derate Above 25 ˇC:

AGR18060EU

AGR18060EF

—

T^J

1.00

200

W/°C

°C

AGR18060EU AGR18060EF

Figure 1. Available Packages

Operating Junction Tempera-

ture

Storage Temperature Range

T^STG–65, 150 °C

Features

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Typical EDGE performance:

1880 MHz, 26 V, I^DQ= 500 mA

— Output power (P^OUT): 20 W.

— Power gain: 15 dB.

— Efficiency: 34%.

— Modulation spectrum:

@ ±400 kHz = –62 dBc.

@ ±600 kHz = –73 dBc.

— Error vector magnitude (EVM) = 2%.

Table 3. ESD Rating*

Minimum (V)

Class

AGR18060E

HBM

500

Typical performance over entire GSM band:

— P1dB: 60 W typ.

CDM

1500

— Power gain: @ P1dB = 14 dB.

— Efficiency @ P1dB = 52% typical.

— Return loss: –10 dB.

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

PEAK Devices

during all handling, assembly, and test operations. Agere

High-reliability, gold-metalization process.

employs both a human-body model (HBM) and a charged-device

model (CDM) qualification requirement in order to determine

ESD-susceptibility limits and protection design evaluation. ESD

voltage thresholds are dependent on the circuit parameters used

in each of the models, as defined by JEDEC's JESD22-A114

(HBM) and JESD22-C101 (CDM) standards.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continu-

ous wave (CW) output power.

Large signal impedance parameters available.

12 3 4 5 6 7...9

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与AGR18060E相关器件

型号	品牌	获取价格	描述	数据表
AGR18060EF	TRIQUINT	获取价格	60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
AGR18060EU	TRIQUINT	获取价格	60 W, 1805 MHz-1880 MHz, LDMOS RF Power Transistor
AGR18090E	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18090EF	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18090EU	TRIQUINT	获取价格	90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125E	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125EF	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR18125EU	TRIQUINT	获取价格	125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
AGR19030EF	TRIQUINT	获取价格	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
AGR19045EF	TRIQUINT	获取价格	45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

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