Datasheet > AGN200S1HX

AGN200S1HX

更新时间： 2024-11-18 19:58:35

品牌	Logo	应用领域
松下 - PANASONIC		光电二极管继电器
页数	文件大小	规格书
4页	101K
描述
Power/Signal Relay, 2 Form C, DPDT, Momentary, 0.094A (Coil), 1.5VDC (Coil), 140mW (Coil), 1A (Contact), 110VDC (Contact), DC Input, Random, AC/DC Output, Surface Mount-Straight, ROHS COMPLIANT

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

AGN200S1HX 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8536.49.00.50
风险等级：	5.14	主体宽度：	5.7 mm
主体高度：	9 mm	主体长度或直径：	10.6 mm
最大线圈电流（直流）：	0.094 A	线圈工作电压（直流）：	1.13 V
线圈功率：	140 mW	线圈释放电压（直流）：	0.15 V
线圈电阻：	16 Ω	最大线圈电压（直流）：	1.5 V
标称线圈电压：	1.5 V	线圈/输入电源类型：	DC
触点（交流）最大额定功率R负载：	37.5VA@125VAC	触点（交流）最大额定R负载：	1A@125VAC
最大触点电流（交流）：	1 A	最大触点电流（直流）：	1 A
触点（直流）最大额定功率R负载：	30W@110VDC	触点（直流）最大额定R负载：	1A@110VDC
触点电阻：	100 m Ω	最大触点电压（交流）：	125 V
最大触点电压（直流）：	110 V	触点/输出电源类型：	AC/DC
线圈与触点之间的介电强度：	1500 Vrms	断开触点之间的介电强度：	750 Vrms
电气寿命：	100000 Cycle(s)	末端触点材料：	Silver Palladium
末端触点镀层：	GOLD	输入切换控制类型：	Random
绝缘电阻：	1000000000 Ω	JESD-609代码：	e4
安装特点：	SURFACE MOUNT-STRAIGHT	端子数量：	8
工作时间：	4 ms	最高工作温度：	85 °C
最低工作温度：	-40 °C	包装方法：	BOX; TAPE AND REEL
物理尺寸：	10.6mm x 5.7mm x 9mm	参考标准：	BSI; CSA; UL
继电器动作：	MOMENTARY	继电器样式：	2 FORM C
继电器功能：	DPDT	继电器类型：	POWER/SIGNAL RELAY
释放时间：	4 ms	表面贴装：	NO
端子面层：	Silver/Palladium (Ag/Pd)	端接类型：	SOLDER
重量：	1 g	Base Number Matches：	1

AGN200S1HX 数据手册

TESTING

ULTRA-SMALLPACKAGE

SLIM POLARIZED RELAY

GN-RELAYS

FEATURES

• Compact slim body saves space

Thanks to the small surface area of 5.7

mm × 10.6 mm .224 inch × .417 inch and

low height of 9.0 mm .354 inch, the pack-

aging density can be increased to allow

for much smaller designs.

Due to highly efﬁcient magnetic circuit de-

sign, leakage ﬂux is reduced and changes

in electrical characteristics from compo-

nents being mounted close-together are

minimized. This all means a packaging

density higher than ever before.

5.70±0.3

.224±.012

10.60±0.3

.417±.012

9.00±0.3

.354±.012

• Outstanding surge resistance.

Surge withstand between open contacts:

1,500 V 10×160 µs (FCC part 68)

Surge withstand between contacts and

coil: 2,500 V 2×10 µs (Bellcore)

• Nominal operating power: 140 mW

• Outstanding vibration and shock re-

sistance.

Functional shock resistance:

750 m/s²{75G}

Destructive shock resistance:

1,000 m/s²{100G}

5.70±0.3

10.60±0.3

.417±.012

.224±.012

•The use of twin crossbar contacts en-

sures high contact reliability.

Max.10.00

.394

AgPd contact is used because of its good

sulﬁde resistance. Adopting low-gas

molding material. Coil assembly molding

technology which avoids generating vola-

tile gas from coil.

Functional vibration resistance:

10 to 55 Hz (at double amplitude of 3.3

mm .130 inch)

Destructive vibration resistance:

10 to 55 Hz (at double amplitude of 5 mm

.197 inch)

mm inch

• Increased packaging density

SPECIFICATIONS

Contact

Characteristics

Arrangement

2 Form C

Initial insulation resistance*¹

Min. 1,000MΩ (at 500V DC)

750 Vrms for 1min.

Initial contact resistance, max.

(By voltage drop 6 V DC 1A )

Between open contacts

Initial

100 mΩ

breakdown Between contact sets

1,000 Vrms for 1min.

1,500 Vrms for 1min.

Stationary: AgPd+Au clad

Movable: AgPd

voltage*²

Between contacts and coil

Contact material

Between open contacts

1,500 V (FCC Part 68)

2,500 V (Bellcore)

Nominal switching capacity

(resistive load)

1 A 30 V DC

0.3 A 125 V AC

(10×160 µs)

Initial surge

voltage

Between contacts and coil

Max. switching power

(resistive load)

(2×10 µs)

30 W, 37.5 V A

Rating

Max. 4 ms (Approx. 2 ms)

[Max. 4 ms (Approx. 2 ms)]

Operate time [Set time]*³(at 20°C)

Max. switching voltage

Max. switching current

Min. switching capacity ❇1

110 V DC, 125 V AC

1 A

Release time (without diode)

[Reset time]*³(at 20°C)

Max. 4 ms (Approx. 1 ms)

[Max. 4 ms (Approx. 2 ms)]

10 µA 10 mV DC

140mW (1.5 to 12 V DC)

230mW (24 V DC)

Temperature rise*⁴(at 20°C)

Max. 50°C

Single side stable

1 coil latching

Nominal

operating

power

Functional*⁵

Destructive*⁶

Min. 750 m/s²{75G]

Min. 1,000 m/s²{100G]

Shock resistance

100mW (1.5 to 12 V DC)

120mW (24 V DC)

10 to 55 Hz at double

amplitude of 3.3 mm

Functional*⁷

Vibration resistance

Mechanical (at 180 cpm)

1 A 30 V DC

5 × 10⁷

Expected

life (min.

operations)

10⁵

10 to 55 Hz at double

amplitude of 5 mm

Destructive

resistive

Electrical

(at 20 cpm)

0.3 A 125V AC

resistive

10⁵

Conditions for opera- Ambient

–40°C to 85°C

–40°F to 185°F

tion, transport and

storage*⁸

temperature ❇2

Remarks:

* Speciﬁcations will vary with foreign standards certiﬁcation ratings.

*¹Measurement at same location as "Initial breakdown voltage" section.

*²Detection current: 10mA.

(Not freezing and con-

densing at low tem-

perature)

Humidity

5 to 85% R.H.

*³Nominal voltage applied to the coil, excluding contact bounce time.

*⁴By resistive method, nominal voltage applied to the coil; contact carrying current:

1 A.

Unit weight

Approx. 1 g.035 oz

Notes:

*⁵Half-wave pulse of sine wave: 6 ms; detection time: 10µs.

*⁶Half-wave pulse of sine wave: 6 ms.

❇1 This value can change due to the switching frequency, environmental conditions,

and desired reliability level, therefore it is recommended to check this with the

actual load.

*⁷Detection time: 10µs.

*⁸Refer to 5. Conditions for operation, transport and storage mentioned in

AMBIENT ENVIRONMENT (Page 61)

❇2 The upper limit for the ambient temperature is the maximum temperature that

can satisfy the coil temperature rise. Under the packing condition, allowable

temperature range is from –40 to +70°C –40° to +158°F.

125

12 3 4

中文翻译

下载PDF

与AGN200S1HX相关器件

型号	品牌	获取价格	描述	数据表
AGN200S1HZ	PANASONIC	获取价格	High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200S1HZ	NAIS	获取价格	ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
AGN200S24	PANASONIC	获取价格	High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200S24	NAIS	获取价格	ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
AGN200S24X	PANASONIC	获取价格	Power/Signal Relay, 2 Form C, DPDT, Momentary, 0.01A (Coil), 24VDC (Coil), 230mW (Coil), 1
AGN200S24Z	PANASONIC	获取价格	High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200S24Z	NAIS	获取价格	ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
AGN200S4H	NAIS	获取价格	ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY
AGN200S4H	PANASONIC	获取价格	High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200S4HX	PANASONIC	获取价格	Power/Signal Relay, 2 Form C, DPDT, Momentary, 0.031A (Coil), 4.5VDC (Coil), 140mW (Coil),

与AGN200S1HX相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

AGN200S1HX

AGN200S1HX 技术参数

AGN200S1HX 数据手册

与AGN200S1HX相关器件

与AGN200S1HX相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AGN200S1HX

AGN200S1HX 技术参数

AGN200S1HX 数据手册

与AGN200S1HX相关器件

与AGN200S1HX相关文章

您还可以找

您在本页遇到什么问题？