是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | TFQFP, | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.58 |
JESD-30 代码: | S-PQFP-G100 | JESD-609代码: | e3 |
长度: | 14 mm | 湿度敏感等级: | 3 |
可配置逻辑块数量: | 3072 | 等效关口数量: | 125000 |
端子数量: | 100 | 最高工作温度: | 70 °C |
最低工作温度: | -20 °C | 组织: | 3072 CLBS, 125000 GATES |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFQFP |
封装形状: | SQUARE | 封装形式: | FLATPACK, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | NOT SPECIFIED | 可编程逻辑类型: | FIELD PROGRAMMABLE GATE ARRAY |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压: | 1.575 V | 最小供电电压: | 1.14 V |
标称供电电压: | 1.2 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 14 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AGLN125V2-ZVQG100ES | MICROSEMI |
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IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100I | MICROSEMI |
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IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100PP | MICROSEMI |
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IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100Y | MICROSEMI |
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IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100YES | MICROSEMI |
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IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100YI | MICROSEMI |
获取价格 |
IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG100YPP | MICROSEMI |
获取价格 |
IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG81 | MICROSEMI |
获取价格 |
IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG81ES | MICROSEMI |
获取价格 |
IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology | |
AGLN125V2-ZVQG81I | MICROSEMI |
获取价格 |
IGLOO nano Low Power Flash FPGAs with Flash*Freeze Technology |