Datasheet > AFGH4L40T120RW

AFGH4L40T120RW

更新时间： 2024-04-09 18:59:24

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
8页	365K
描述
IGBT - Automotive Grade 1200 V 40 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AFGH4L40T120RW 数据手册

DATA SHEET

www.onsemi.com

IGBT - Power, Single,

N-Channel, Field Stop VII

VCE

TYP

I MAX

CES

(sat)

1200 V

1.4 V

40 A

(FS7), SCR, Power TO247-4L

1200 V, 1.4 V, 40 A

PIN CONNECTIONS

AFGH4L40T120RW

E1: Kelvin Emitter

E2: Power Emitter

Description

Using the novel field stop 7th generation IGBT technology

in TO247 4−lead package, this device offers the optimum

performance with low on state voltage and minimal switching losses

for both hard and soft switching topologies in automotive applications.

Features

 Extremely Efficient Trench with Field Stop Technology

 Maximum Junction Temperature − T = 175C

 Short Circuit Rated and Low Saturation Voltage

 Fast Switching and Tightened Parameter Distribution

 AEC−Q101 Qualified, PPAP Available Upon Request

 These Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

TO−247−4LD

CASE 340CJ

Applications

 Automotive E−compressor

 Automotive EV PTC Heater

 OBC

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25C unless otherwise noted)

AFGH40

120RW

&Z&3&K$Y

Parameter

Collector to Emitter Voltage

Symbol Value

Unit

1200

20

30

Gate to Emitter Voltage

Transient Gate to Emitter Voltage

Collector Current

Power Dissipation

= 25C

= 100C

= 25C

= 100C

= 25C,

AFGH40120RW

= Specific Device Code

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

= onsemi Logo

483

241

120

Pulsed Collector Current

t = 10 ms (Note 1)

Short Circuit Withstand Time

C

ORDERING INFORMATION

= 15 V, Vcc = 800 V, T = 150C

Device

Package

Shipping

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

stg

AFGH4L40T120RW

TO−247−4L 30 Units / Rail

(Pb−Free)

Lead Temperature for Soldering Purposes

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: Pulse width limited by max. junction temperature

 Semiconductor Components Industries, LLC, 2023

Publication Order Number:

January, 2024 − Rev. 1

AFGH4L40T120RW/D

12 3 4 5 6 7 8

下载PDF

与AFGH4L40T120RW相关器件

型号	品牌	描述	获取价格	数据表
AFGH4L40T120RWD	ONSEMI	IGBT - Automotive Grade 1200 V 40 A	获取价格
AFGHL25T120RHD	ONSEMI	IGBT - Automotive Grade low cost 1200 V 25 A	获取价格
AFGHL25T120RLD	ONSEMI	IGBT - Automotive Grade 1200 V 25 A	获取价格
AFGHL25T120RW	ONSEMI	IGBT - Automotive Grade 1200 V 25 A	获取价格
AFGHL25T120RWD	ONSEMI	IGBT - Automotive Grade 1200 V 25 A	获取价格
AFGHL30T65RQDN	ONSEMI	IGBT - 650 V 30 A - Short circuit rated FS4	获取价格