Datasheet > AF002C4-39

AF002C4-39

更新时间： 2024-11-17 22:05:27

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管开关光电二极管
页数	文件大小	规格书
4页	47K
描述
GaAs IC Control FET Series DC-2.5 GHz

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AF002C4-39 数据手册

GaAs IC Control FET Series

DC–2.5 GHz

AF002C1-39, AF002C4-39

Features

■ Low Cost SOT-23 Package

SOT-23

0.120 (3.05 mm)

0.110 (2.79 mm)

0.018 (0.45 mm)

0.015 (0.38 mm)

■ Series or Shunt Configuration

■ Low DC Current Drain

0.055 (1.40 mm)

0.047 (1.19 mm)

0.104 (2.64 mm)

0.083 (2.10 mm)

■ Ideal Switch Building Blocks

■ Pin Diode Replacements

■ High Power Antenna Switches

0.024 (0.61 mm)

0.018 (0.45 mm)

0.040 (1.02 mm)

0.037 (0.94 mm)

0.080 (2.03 mm)

0.070 (1.78 mm)

0.007 (0.18 mm)

0.003 (0.08 mm)

Description

0.045

(1.14 mm)

0.035

This group of GaAs control FETs can be used in both

series and shunt configurations.They incorporate on-chip

circuitry that eliminates the need for extra bias

components and minimizes power drain to typically 25 µW.

These features make the device ideal replacements for

PIN diodes, where low DC drain is critical.

(0.89 mm)

0.004 (0.10 mm)

0.0005 (0.01 mm)

0.027 (0.69 mm) REF.

Isolation performance degrades at higher frequencies due

to package parasitics. They can be tuned out in narrow

band applications as shown in the circuit examples on the

following pages.

Electrical Specifications at 25°C (0, -5 V)

4,5

Part Number

Frequency

R_ON(Ω)

Insertion Loss (dB)

C_OFF(pF)

Isolation (db)

P_{-1 dB}(W)

(GHz)

Typ.

6.4

0.8

Max.

9.0

1.1

Series

0.50

0.60

0.70

0.20

0.25

0.30

Shunt

Typ.

0.13

1.10

Max.

0.25

1.50

1.5

Series

Shunt

Typ.

0.5

1.0

AF002C1-39

AF002C4-39

DC–0.5 GHz

DC–1.0 GHz

DC–2.5 GHz

DC–0.5 GHz

DC–1.0 GHz

DC–2.5 GHz

0.10

0.15

0.20

0.15

0.25

2.00

Operating Characteristics at 25°C (0, -5 V)

Parameter

Condition

Frequency

Min.

Typ.

Max.

Unit

Switching Characteristics

Rise, Fall (10/90% or 90/10% RF)

On, Off (50% CTL to 90/10% RF)

Control Voltages

V_Low= 0 to -0.2 V @ 20 µA Max.

V_High= -5 V @ 50 µA to -9 V @ 200 µA Max.

1. All measurements made in a 50 Ω system, unless otherwise specified.

2. DC = 300 kHz.

3. R_ON- resistance in Ω in low impedance state when “0” V is applied to Gate (G).

4. Insertion loss changes by 0.003 dB/°C.

5. Insertion loss and isolation typical values.

6. C_OFF- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 3/99A

12 3 4

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