Datasheet > ADS12B3-ASARH

ADS12B3-ASARH

更新时间： 2025-09-18 18:43:07

品牌	Logo	应用领域
朗明纳斯 - LUMINUS		/
页数	文件大小	规格书
9页	658K
描述
Technology : Gen3; Package : SMBF; VDC_min (V) : 1200V; IF_max (A) : 1A; VF (V) @Tj=25℃ : 1.35; VF (V) @Tj=175℃ : 1.8; IFSM (A) @Tc=25℃ : 15; IR_max (uA) @Tj=25℃ : 8; Configuration : single chip; Qualification : Automotive; Status : active and preferred;

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ADS12B3-ASARH 数据手册

Datasheet

ADS12B3

3^rdGeneration 1200V/1A SiC Schottky Barrier Diode

Features

➢

AEC-Q101 qualified

Revolutionary semiconductor material - Silicon Carbide (SiC)

No reverse recovery

High-speed switching performance

Temperature-independent switching behavior

System cost / size savings due to reduced cooling requirements

Junction temperature range from -55℃ to 175℃

RoHS compliant

Potential Applications

Package Type: SMBF

➢

DC/DC converter for EV/HEV

On board charger (OBC)

Description

The ADS12B3 SiC Schottky Barrier Diode (SBD) has been developed using Sanan’s advanced 3^rd

generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency,

higher operation temperature and lower loss and can be operated at higher frequency than Si-based

solutions. As to the Schottky structure, it shows no recovery at turn-off and allows a low leakage current

with reverse voltage up to 1200V. It can contribute to system miniaturization and achieve lightweight

system design. Using RoHS compliant components and being AEC-Q101 qualified, it is qualified for use

in industrial application.

Product Specifications

Device

V_RRM

I_F(135℃)

V_F(25℃)

Q_C

Marking

12B3

ADS12B3

1200V

1.1A

1.35V

6.4nC

Hunan Sanan Semiconductor Co., Ltd.

https://www.sanan-semiconductor.com/en

1 / 9

Rev. 1.0.0 2023.10

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