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ADR293TRU-EP-R7 PDF预览

ADR293TRU-EP-R7

更新时间: 2024-02-28 10:13:45
品牌 Logo 应用领域
亚德诺 - ADI 电源电路参考电压源光电二极管
页数 文件大小 规格书
12页 182K
描述
Low Noise, Micropower 5.0 V Precision Voltage Reference

ADR293TRU-EP-R7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:MO-153AA, TSSOP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.76
模拟集成电路 - 其他类型:THREE TERMINAL VOLTAGE REFERENCEJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.4 mm
湿度敏感等级:1功能数量:1
输出次数:1端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电压:5.01 V最小输出电压:4.99 V
标称输出电压:5 V封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm子类别:Voltage References
最大供电电压 (Vsup):15 V最小供电电压 (Vsup):6 V
表面贴装:YES最大电压温度系数:30 ppm/ °C
温度等级:MILITARY端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
微调/可调输出:NO最大电压容差:0.2%
宽度:3 mmBase Number Matches:1

ADR293TRU-EP-R7 数据手册

 浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第2页浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第3页浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第4页浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第5页浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第6页浏览型号ADR293TRU-EP-R7的Datasheet PDF文件第7页 
Low Noise, Micropower  
5.0 V Precision Voltage Reference  
ADR293-EP  
FEATURES  
PIN CONFIGURATION  
ADR293-EP  
6.0 V to 15 V supply range  
1
2
3
4
NC  
8
7
6
5
Supply current: 15 μA maximum  
Low noise: 15 μV p-p typical (0.1 Hz to 10 Hz)  
High output current: 5 mA  
NC  
NC  
V
V
IN  
TOP VIEW  
(Not to Scale)  
NC  
OUT  
GND  
NC  
Pin-compatible with the REF02/REF19x  
NC = NO CONNECT  
ENHANCED PRODUCT FEATURES  
Figure 1. 8-Lead TSSOP (RU-8)  
Supports defense and aerospace applications (AQEC  
standard)  
Military temperature range (−55°C to +125°C)  
Controlled manufacturing baseline  
1 assembly/test site  
1 fabrication site  
Enhanced product change notification  
Qualification data available on request  
APPLICATIONS  
Portable instrumentation  
Precision reference for 5 V systems  
ADC and DAC reference  
Solar-powered applications  
GENERAL DESCRIPTION  
The ADR293-EP is a low noise, micropower precision voltage  
reference that utilizes an XFET® (eXtra implanted junction FET)  
reference circuit. The XFET architecture offers significant  
performance improvements over traditional band gap and  
buried Zener-based references. Improvements include one  
quarter the voltage noise output of band gap references  
operating at the same current, very low and ultralinear  
temperature drift, low thermal hysteresis, and excellent long-  
term stability.  
is 30 ppm/°C maximum over the military temperature range,  
and the initial error is only 0.2% at 25°C. Line regulation and  
load regulation are typically 70 ppm/V and 30 ppm/mA,  
respectively, maintaining the reference’s overall high  
performance.  
The ADR293-EP is specified over the military temperature  
range of –55°C to +125°C. This device is available in an 8-lead  
TSSOP package.  
Additional applications information is available in the ADR293  
data sheet.  
The ADR293-EP is a series voltage reference providing stable  
and accurate output voltage from a 6.0 V supply. Quiescent  
current is only 15 μA maximum, making this device ideal for  
battery powered instrumentation. The temperature coefficient  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2010 Analog Devices, Inc. All rights reserved.  
 
 
 
 
 

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