GaAs, pHEMT, MMIC, Single Positive Supply,
DC to 10 GHz Power Amplifier
ADPA9002
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
ADPA9002
OP1dB: 29 dBm typical
Gain: up to 15 dB typical
OIP3: up to 43 dBm typical
Self biased at VDD = 12 V at 385 mA typical with an optional
bias control on VGG1 for IDQ adjustment
50 Ω matched input/output
GND
NIC
NIC
1
2
3
4
5
6
7
8
24 GND
23 NIC
22
GND
32-lead, 5 mm × 5 mm LFCSP
21 RFOUT/V
GND
RFIN
GND
NIC
DD
20
19
GND
NIC
APPLICATIONS
18 NIC
17 GND
GND
Military and space
Test instrumentation
PACKAGE
BASE
GND
Figure 1.
GENERAL DESCRIPTION
The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic
microwave integrated circuit (MMIC), power amplifier that
operates between dc and 10 GHz. The amplifier provides 15 dB
of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output
power (PSAT) while requiring 385 mA from a 12 V supply. The
ADPA9002 is self biased in normal operation and has an
test equipment applications. The ADPA9002 also features inputs
and outputs that are internally matched to 50 Ω, housed in a
RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity
package, making it compatible with high volume surface-mount
technology (SMT) assembly equipment.
Note that throughout this data sheet, multifunction pins, such
as RFOUT/VDD, are referred to either by the entire pin name or
by a single function of the pin, for example, VDD, when only that
function is relevant.
optional bias control for supply quiescent current (IDQ
)
adjustment. The amplifier is ideal for military and space and
Rev. 0
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