Datasheet > ADP3419JRMZ-REEL

ADP3419JRMZ-REEL

更新时间： 2024-01-01 11:57:59

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
17页	1132K
描述
HALF BRDG BASED MOSFET DRIVER, PDSO10, LEAD FREE, MSOP-10

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ADP3419JRMZ-REEL 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	MSOP
包装说明：	LEAD FREE, MSOP-10	针数：	10
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.46
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	S-PDSO-G10	JESD-609代码：	e3
长度：	3 mm	湿度敏感等级：	1
功能数量：	1	端子数量：	10
最高工作温度：	100 °C	最低工作温度：
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP10,.19,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
电源：	5 V	认证状态：	Not Qualified
座面最大高度：	1.1 mm	子类别：	MOSFET Drivers
标称供电电压：	5 V	电源电压1-最大：	26 V
电源电压1-分钟：	4 V	表面贴装：	YES
温度等级：	OTHER	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	3 mm

ADP3419JRMZ-REEL 数据手册

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ADP3419

APPLICATION INFORMATION

SUPPLY CAPACITOR SELECTION

POWER AND THERMAL CONSIDERATIONS

For the supply input (VCC) of the ADP3419, a local bypass

capacitor is recommended to reduce the noise and to supply

some of the peak currents drawn. Use a 10 µF or 4.7 µF

multilayer ceramic (MLC) capacitor. MLC capacitors provide

the best combination of low ESR and small size, and can be

obtained from the following vendors.

The major power consumption of the ADP3419-based driver

circuit is from the dissipation of MOSFET gate charge. It can be

estimated as

P_MAX≈VCC×(Q_HSGATE+Q_LSGATE)× f_MAX

(3)

where:

VCC is the supply voltage 5 V.

_MAXis the highest switching frequency.

_HSGATEand Q_LSGATEare the total gate charge of high-side and

Table 5.

Vendor

Part Number

Web Address

Murata

GRM235Y5V106Z16 www.murata.com

Taiyo-Yuden

Tokin

EMK325F106ZF

C23Y5V1C106ZP

www.t-yuden.com

www.tokin.com

low-side MOSFETs, respectively.

For example, the ADP3419 drives two IRF7821 high-side

MOSFETs and two IRF7832 low-side MOSFETs. According to

Keep the ceramic capacitor as close as possible to the ADP3419.

the MOSFET data sheets, Q_HSGATE= 18.6 nC and Q_LSGATE

68 nC. Given that f_MAXis 300 kHz, P_MAXwould be about

130 mW.

BOOTSTRAP CIRCUIT

The bootstrap circuit uses a charge storage capacitor (C_BST) and

a Schottky diode (D1), as shown in Figure 17. Selection of these

components can be done after the high-side MOSFET has been

chosen. The bootstrap capacitor must have a voltage rating that

is able to handle at least 5 V more than the maximum supply

voltage. The capacitance is determined by

Part of this power consumption generates heat inside the

ADP3419. The temperature rise of the ADP3419 against its

environment is estimated as

∆T ≈ θ_JA×P_MAX×η

(4)

Q_HSGATE

∆V_BST

C_BST

(1)

where θ_JAis ADP3419’s thermal resistance from junction to air,

given in the absolute maximum ratings as 220°C/W for a

4-layer board.

where:

_HSGATEis the total gate charge of the high-side MOSFET.

∆V_BSTis the voltage droop allowed on the high-side MOSFET

The total MOSFET drive power dissipates in the output

resistance of ADP3419 and in the MOSFET gate resistance as

well. η represents the ratio of power dissipation inside the

ADP3419 over the total MOSFET gate driving power. For

normal applications, a rough estimation for η is 0.7. A more

accurate estimation can be calculated using

drive.

For example, two IRF7811 MOSFETs in parallel have a total

gate charge of about 36 nC. For an allowed droop of 100 mV,

the required bootstrap capacitance is 360 nF. A good quality

ceramic capacitor should be used, and derating for the signifi-

cant capacitance drop of MLCs at high temperature must be

applied. In this example, selection of 470 nF or even 1 µF would

be recommended.

Q_HSGATE

Q_HSGATE+ Q_LSGATE

0.5× R1

0.5× R2

⎛

⎜

⎞

⎟

η ≈

R1+ R_HSGATE+ R R2 + R_HSGATE

⎝

⎠

(5)

Q_LSGATE

Q_HSGATE+ Q_LSGATE

0.5× R3

R3 + R_LSGATER4 + R_LSGATE

0.5× R4

⎛

⎜

⎞

⎟

⎝

⎠

A Schottky diode is recommended for the bootstrap diode due

to its low forward drop, which maximizes the drive available for

the high-side MOSFET. The bootstrap diode must also be able

to handle at least 5 V more than the maximum battery voltage.

The average forward current can be estimated by

where:

R1 and R2 are the output resistances of the high-side driver:

R1 = 1.7 (DRVH − BST), R2 = 0.8 (DRVH − SW).

R3 and R4 are the output resistances of the low-side driver:

R3 = 1.7 (DRVL − VCC), R4 = 0.8 (DRVL − GND).

R is the external resistor between the BST pin and the BST

capacitor.

I_F(AVG)= Q_HSGATE× f_MAX

(2)

where f_MAXis the maximum switching frequency of the

_HSGATEand R_LSGATEare gate resistances of high-side and low-side

controller.

MOSFETs, respectively.

Assuming that R = 0 and that R_HSGATE= R_LSGATE= 0.5, Equation 5

gives a value of η = 0.71. Based on Equation 4, the estimated

temperature rise in this example is about 22°C.

Rev. A | Page 11 of 16

1...9 10 111213 14 15...17

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