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ADP197 PDF预览

ADP197

更新时间: 2022-10-09 10:08:53
品牌 Logo 应用领域
亚德诺 - ADI 开关电源开关手机
页数 文件大小 规格书
16页 252K
描述
5 V, 3 A Logic Controlled High-Side Power Switch Mobile phones

ADP197 数据手册

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ADP197  
THEORY OF OPERATION  
on and off is controlled by the enable input, EN, which is capable of  
interfacing directly with 1.8 V logic signals.  
VIN  
VOUT  
GND  
The ADP197 is capable of 3 A of continuous current as long as TJ  
is less than 70°C. At 85°C, the rated current drops to 2.22 A.  
CHARGE PUMP  
EN  
AND SLEW RATE  
CONTROL  
The overtemperature protection circuit activates if the load cur-  
rent causes the junction temperature to exceed 125°C. When  
this occurs, the overtemperature protection circuitry disables  
the output until the junction temperature falls below approximately  
110°C, at which point the output is reenabled. If the fault condition  
persists, the output cycles off and on until the fault is removed.  
OVERTEMPERATURE  
PROTECTION  
ADP197  
Figure 23. Functional Block Diagram  
The ADP197 is a high-side NMOS load switch, controlled by an  
internal charge pump. The APD197 is designed to operate with  
power supply voltages between 1.8 V and 5.5 V.  
ESD protection structures are shown in the block diagram as Zener  
diodes.  
The ADP197 is a low quiescent current device with a nominal  
4 MΩ pull-down resistor on its enable pin (EN). The package is a  
space-saving 1.0 mm × 1.5 mm, 6-ball WLCSP.  
An internal charge pump biases the NMOS switch to achieve a  
relatively constant, ultralow on resistance of 12 mΩ across the  
entire input voltage range. The use of the internal charge pump  
also allows for controlled turn-on times. Turning the NMOS switch  
Rev. 0 | Page 10 of 16  
 

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