Datasheet > ADP1173AN-3.3

ADP1173AN-3.3

更新时间： 2024-02-02 11:38:38

品牌	Logo	应用领域
其他 - ETC		开关光电二极管控制器
页数	文件大小	规格书
16页	432K
描述
Voltage-Mode SMPS Controller

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技术参数
数据手册

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ADP1173AN-3.3 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DIP
包装说明：	DIP,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.68
模拟集成电路 - 其他类型：	SWITCHING REGULATOR	控制模式：	VOLTAGE-MODE
控制技术：	PULSE FREQUENCY MODULATION	最大输入电压：	30 V
最小输入电压：	2 V	标称输入电压：	3 V
JESD-30 代码：	R-PDIP-T8	JESD-609代码：	e0
长度：	9.88 mm	湿度敏感等级：	NOT SPECIFIED
功能数量：	1	端子数量：	8
最高工作温度：	70 °C	最低工作温度：
最大输出电流：	1.5 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
座面最大高度：	5.33 mm	表面贴装：	NO
切换器配置：	BOOST	最大切换频率：	32 kHz
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	7.62 mm	Base Number Matches：	1

ADP1173AN-3.3 数据手册

ADP1173

DIODE SELECTION

In specifying a diode, consideration must be given to speed,

forward voltage drop and reverse leakage current. When the

ADP1173 switch turns off, the diode must turn on rapidly if

high efficiency is to be maintained. Schottky rectifiers, as well as

fast signal diodes such as the 1N4148, are appropriate. The

forward voltage of the diode represents power that is not deliv-

ered to the load, so V_Fmust also be minimized. Again, Schottky

diodes are recommended. Leakage current is especially impor-

tant in low current applications, where the leakage can be a

significant percentage of the total quiescent current.

For most circuits, the 1N5818 is a suitable companion to the

ADP1173. This diode has a V_Fof 0.5 V at 1 A, 4 µA to 10 µA

leakage, and fast turn-on and turn-off times. A surface mount

version, the MBRS130T3, is also available. For applications

where the ADP1173 is “off” most of the time, such as when the

load is intermittent, a silicon diode may provide higher overall

efficiency due to lower leakage. For example, the 1N4933 has a

1 A capability, but with a leakage current of less than 1 µA. The

higher forward voltage of the 1N4933 reduces efficiency when

the ADP1173 delivers power, but the lower leakage may outweigh

the reduction in efficiency.

Figure 11. Aluminum Electrolytic

Figure 12. Tantalum Electrolytic

Figure 13. OS-CON Capacitor

For switch currents of 100 mA or less, a Schottky diode such as

the BAT85 provides a V_Fof 0.8 V at 100 mA and leakage less

than 1 µA. A similar device, the BAT54, is available in a SOT23

package. Even lower leakage, in the 1 nA to 5 nA range, can be

obtained with a 1N4148 signal diode.

General purpose rectifiers, such as the 1N4001, are not suitable

for ADP1173 circuits. These devices, which have turn-on times

of 10 µs or more, are too slow for switching power supply

applications. Using such a diode “just to get started” will result

in wasted time and effort. Even if an ADP1173 circuit appears

to function with a 1N4001, the resulting performance will not

be indicative of the circuit performance when the correct diode

is used.

CIRCUIT OPERATION, STEP-UP (BOOST) MODE

In boost mode, the ADP1173 produces an output voltage that

is higher than the input voltage. For example, +12 V can be

generated from a +5 V logic power supply or +5 V can be

derived from two alkaline cells (+3 V).

Figure 16 shows an ADP1173 configured for step-up operation.

The collector of the internal power switch is connected to the

output side of the inductor, while the emitter is connected to

GND. When the switch turns on, pin SW1 is pulled near ground.

This action forces a voltage across L1 equal to V_IN–V_CE(SAT),

and current begins to flow through L1. This current reaches a

final value (ignoring second-order effects) of:

If low output ripple is important, the user should consider the

ADP3000. This device switches at 400 kHz, and the higher

switching frequency simplifies the design of the output filter.

Consult the ADP3000 data sheet for additional details.

All potential current paths must be considered when analyzing

very low power applications, and this includes capacitor leakage

current. OS-CON capacitors have leakage in the 5 µA to 10 µA

range, which will reduce efficiency when the load is also in the

microampere range. Tantalum capacitors, with typical leakage

in the 1 µA to 5 µA range, are recommended for very low power

applications.

V_IN–V

I_PEAK

^{CE(SAT )}×23 µs

where 23 µs is the ADP1173 switch’s “on” time.

REV. 0

–8–

1...5 6 789 10 11...16

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