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ADG918BRM-REEL7 PDF预览

ADG918BRM-REEL7

更新时间: 2024-11-18 12:52:31
品牌 Logo 应用领域
亚德诺 - ADI 复用器光电二极管
页数 文件大小 规格书
16页 570K
描述
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

ADG918BRM-REEL7 数据手册

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Wideband 4 GHz, 43 dB Isolation at 1 GHz,  
CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT  
ADG918/ADG919  
FUNCTIONAL BLOCK DIAGRAMS  
FEATURES  
Wideband switch: −3 dB @ 4 GHz  
Absorptive/reflective switches  
ADG918  
RF1  
High off isolation (43 dB @ 1 GHz)  
Low insertion loss (0.8 dB @1 GHz)  
Single 1.65 V to 2.75 V power supply  
CMOS/LVTTL control logic  
RFC  
50  
RF2  
CTRL  
8-lead MSOP and tiny 3 mm × 3 mm LFCSP packages  
Low power consumption (<1 μA)  
50Ω  
APPLICATIONS  
ADG919  
Wireless communications  
General-purpose RF switching  
Dual-band applications  
High speed filter selection  
Digital transceiver front end switch  
IF switching  
RF1  
RF2  
RFC  
CTRL  
Tuner modules  
Figure 1.  
Antenna diversity switching  
LVTTL compatible. The low power consumption of these  
CMOS devices makes them ideally suited to wireless and  
general-purpose high frequency switching applications.  
GENERAL DESCRIPTION  
The ADG918/ADG919 are wideband switches using a CMOS  
process to provide high isolation and low insertion loss to  
1 GHz. The ADG918 is an absorptive (matched) switch having  
50 Ω terminated shunt legs, whereas the ADG919 is a reflective  
switch. These devices are designed such that the isolation is  
high over the dc to 1 GHz frequency range. They have on-board  
CMOS control logic, thus eliminating the need for external  
controlling circuitry. The control inputs are both CMOS and  
PRODUCT HIGHLIGHTS  
1. –43 dB off isolation @ 1 GHz.  
2. 0.8 dB insertion loss @ 1 GHz.  
3. Tiny 8-lead MSOP/LFCSP packages.  
–0.4  
–0.6  
–0.8  
–1.0  
–1.2  
–1.4  
–1.6  
–1.8  
–2.0  
–2.2  
–2.4  
–2.6  
0
V
= 2.5V  
DD  
= 25°C  
–10  
–20  
–30  
–40  
–50  
–60  
–70  
–80  
T
A
S12  
–2.8  
–3.0  
–3.2  
V
T
= 2.5V  
= 25°C  
DD  
S21  
–90  
A
–100  
10k  
100k  
1M  
10M  
100M  
1G  
10G  
10k  
100k  
1M  
10M  
100M  
1G  
10G  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 3. Insertion Loss vs. Frequency  
Figure 2. Off Isolation vs. Frequency  
Rev. C  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 www.analog.com  
Fax: 781.461.3113 ©2003–2008 Analog Devices, Inc. All rights reserved.  
 

ADG918BRM-REEL7 替代型号

型号 品牌 替代类型 描述 数据表
ADG918BRMZ-REEL ADI

完全替代

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
ADG918BRMZ-REEL7 ADI

完全替代

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
ADG918BRM-REEL ADI

完全替代

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

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