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ADG333ABRZ PDF预览

ADG333ABRZ

更新时间: 2024-01-24 05:40:48
品牌 Logo 应用领域
亚德诺 - ADI 开关光电二极管
页数 文件大小 规格书
8页 127K
描述
Quad SPDT Switch

ADG333ABRZ 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP20,.4针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.2
Is Samacsys:N模拟集成电路 - 其他类型:SPDT
JESD-30 代码:R-PDSO-G20JESD-609代码:e3
长度:12.8 mm湿度敏感等级:1
标称负供电电压 (Vsup):-15 V信道数量:1
功能数量:4端子数量:20
标称断态隔离度:72 dB通态电阻匹配规范:4 Ω
最大通态电阻 (Ron):45 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP20,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:12/+-15 V认证状态:Not Qualified
座面最大高度:2.65 mm子类别:Multiplexer or Switches
最大供电电流 (Isup):0.35 mA标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:145 ns
最长接通时间:175 ns切换:BREAK-BEFORE-MAKE
技术:BICMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:7.5 mm
Base Number Matches:1

ADG333ABRZ 数据手册

 浏览型号ADG333ABRZ的Datasheet PDF文件第2页浏览型号ADG333ABRZ的Datasheet PDF文件第3页浏览型号ADG333ABRZ的Datasheet PDF文件第4页浏览型号ADG333ABRZ的Datasheet PDF文件第6页浏览型号ADG333ABRZ的Datasheet PDF文件第7页浏览型号ADG333ABRZ的Datasheet PDF文件第8页 
ADG333A  
TERMINO LO GY  
S
CD, CS (ON)  
tON  
“ON” Switch Capacitance.  
Source T erminal. May be an input or output.  
Drain T erminal. May be an input or output.  
Logic Control Input.  
Delay between applying the digital control in-  
put and the output switching on.  
D
IN  
tOFF  
Delay between applying the digital control in-  
put and the output switching off.  
RON  
RON  
Ohmic resistance between D and S.  
tOPEN  
Break Before Make delay when switches are  
configured as a multiplexer.  
RON variation due to a change in the analog  
input voltage with a constant load current.  
VINL  
VINH  
Maximum input voltage for logic “0.”  
Minimum input voltage for logic “1.”  
Input current of the digital input.  
RON Match  
IS (OFF)  
Difference between the RON of any two  
channels.  
Source leakage current with the switch  
“OFF.”  
IINL (IINH  
Crosstalk  
)
A measure of unwanted signal which is  
coupled through from one channel to another  
as a result of parasitic capacitance.  
I
D (OFF)  
Drain leakage current with the switch  
“OFF.”  
ID, IS (ON)  
Channel leakage current with the switch  
“ON.”  
Off Isolation  
A measure of unwanted signal coupling  
through an “OFF” switch.  
VD (VS)  
Analog voltage on terminals D, S.  
“OFF” Switch Source Capacitance.  
“OFF” Switch Drain Capacitance.  
Charge Injection A measure of the glitch impulse transferred  
from the digital input to the analog output  
during switching.  
CS (OFF)  
CD (OFF)  
P IN CO NFIGURATIO N  
D IP /SO IC/SSO P  
1
2
3
4
5
6
7
8
20  
19  
18  
17  
16  
IN1  
S1A  
D1  
IN4  
S4A  
D4  
S1B  
S4B  
V
V
ADG333A  
TOP VIEW  
(Not to Scale)  
SS  
DD  
15 NC  
14 S3B  
13 D3  
GND  
S2B  
D2  
S3A  
IN3  
12  
11  
S2A  
IN2  
9
10  
NC = NO CONNECT  
REV. 0  
–5–  

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