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ADG333ABRZ PDF预览

ADG333ABRZ

更新时间: 2024-02-01 22:39:43
品牌 Logo 应用领域
亚德诺 - ADI 开关光电二极管
页数 文件大小 规格书
8页 127K
描述
Quad SPDT Switch

ADG333ABRZ 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP20,.4针数:20
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.2
Is Samacsys:N模拟集成电路 - 其他类型:SPDT
JESD-30 代码:R-PDSO-G20JESD-609代码:e3
长度:12.8 mm湿度敏感等级:1
标称负供电电压 (Vsup):-15 V信道数量:1
功能数量:4端子数量:20
标称断态隔离度:72 dB通态电阻匹配规范:4 Ω
最大通态电阻 (Ron):45 Ω最高工作温度:85 °C
最低工作温度:-40 °C输出:SEPARATE OUTPUT
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP20,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:12/+-15 V认证状态:Not Qualified
座面最大高度:2.65 mm子类别:Multiplexer or Switches
最大供电电流 (Isup):0.35 mA标称供电电压 (Vsup):15 V
表面贴装:YES最长断开时间:145 ns
最长接通时间:175 ns切换:BREAK-BEFORE-MAKE
技术:BICMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:7.5 mm
Base Number Matches:1

ADG333ABRZ 数据手册

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ADG333A  
(V = +12 V, V = 0 V ؎ 10%, GND = 0 V, unless otherwise noted)  
SINGLE SUPPLY  
DD  
SS  
–40؇C to  
+85؇C  
P aram eter  
+25؇C  
Units  
Test Conditions/Com m ents  
ANALOG SWIT CH  
Analog Signal Range  
RON  
0 to VDD  
75  
V
35  
typ  
max  
VD = +1 V, +10 V, IS = –1 mA  
LEAKAGE CURRENT S  
VDD = +13.2 V  
Source OFF Leakage IS (OFF)  
±0.1  
±0.25  
±0.1  
±0.4  
nA typ  
nA max  
nA typ  
nA max  
VD = 12.2 V/1 V, VS = 1 V/12.2 V  
T est Circuit 2  
VS = VD = 12.2 V/1 V  
T est Circuit 3  
±3  
±5  
Channel ON Leakage ID, IS (ON)  
DIGIT AL INPUT S  
Input High Voltage, VINH  
Input Low Voltage, VINL  
Input Current  
2.4  
0.8  
V min  
V max  
I
INL or IINH  
±0.005  
±0.5  
µA typ  
µA max  
VIN = 0 V or VDD  
DYNAMIC CHARACT ERIST ICS2  
tON  
110  
100  
10  
5
ns typ  
ns max  
ns typ  
ns max  
ns min  
ns min  
pC typ  
RL = 300 , CL = 35 pF;  
VS = +8 V; T est Circuit 4  
RL = 300 , CL = 35 pF;  
VS = +8 V; T est Circuit 4  
RL = 300 , CL = 35 pF;  
VS = +5 V; T est Circuit 5  
VD = 6 V, RD = 0 , CL = 10 nF;  
VDD = +12 V, VSS = –0 V; T est Circuit 6  
RL = 75 , CL = 5 pF, f = 1 MHz;  
VS = 1.15 V rms, T est Circuit 7  
RL = 75 , CL = 5 pF, f = 1 MHz;  
VS = 1.15 V rms, T est Circuit 8  
200  
180  
tOFF  
Break-Before-Make Delay, tOPEN  
Charge Injection  
OFF Isolation  
72  
85  
dB typ  
dB typ  
Channel-to-Channel Crosstalk  
CS (OFF)  
CD, CS (ON)  
5
20  
pF typ  
pF typ  
POWER REQUIREMENT S  
IDD  
VDD = +13.5 V  
Digital Inputs = 0 V or 5 V  
0.05  
0.25  
mA typ  
mA max  
0.35  
VDD  
+3/+30  
V min/V max  
NOT ES  
1T emperature range is as follows: B Version: –40°C to +85°C.  
2Guaranteed by design, not subject to production test.  
Specifications subject to change without notice.  
REV. 0  
–3–  

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