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ADG1206_15

更新时间: 2024-11-27 01:17:55
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亚德诺 - ADI /
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20页 434K
描述
Low Capacitance

ADG1206_15 数据手册

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Low Capacitance, 16- and 8-Channel  
1ꢀ ꢁV/1ꢂ ꢁ iCMOSMultiplexers  
ADG1ꢂ06VADG1ꢂ07  
FUNCTIONAL BLOCK DIAGRAMS  
FEATURES  
<1 pC charge injection over full signal range  
1.5 pF off capacitance  
33 V supply range  
ADG1206  
ADG1207  
S1  
S1A  
S8A  
DA  
DB  
120 Ω on resistance  
Fully specified at 15 V/+12 V  
3 V logic-compatible inputs  
Rail-to-rail operation  
Break-before-make switching action  
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ  
D
S1B  
S8B  
S16  
1-OF-16  
DECODER  
1-OF-8  
DECODER  
APPLICATIONS  
Audio and video routing  
Automatic test equipment  
Data acquisition systems  
Battery-powered systems  
Sample-and-hold systems  
Communication systems  
A0 A1 A2 A3 EN  
A0 A1 A2 EN  
Figure 1.  
GENERAL DESCRIPTION  
The ultralow capacitance and exceptionally low charge injection  
of these multiplexers make them ideal solutions for data  
acquisition and sample-and-hold applications, where low glitch  
and fast settling are required. Figure 2 shows that there is  
minimum charge injection over the entire signal range of the  
device. iCMOS construction also ensures ultralow power  
dissipation, making the parts ideally suited for portable and  
battery-powered instruments.  
The ADG1206 and ADG1207 are monolithic iCMOS analog  
multiplexers comprising sixteen single channels and eight  
differential channels, respectively. The ADG1206 switches one  
of sixteen inputs to a common output, as determined by the 4-  
bit binary address lines A0, A1, A2, and A3. The ADG1207  
switches one of eight differential inputs to a common  
differential output, as determined by the 3-bit binary address  
lines A0, A1, and A2. An EN input on both devices is used to  
enable or disable the device. When disabled, all channels are  
switched off. When on, each channel conducts equally well in  
both directions and has an input signal range that extends to the  
supplies.  
1.0  
MUX (SOURCE TO DRAIN)  
T
= 25°C  
A
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
V
V
= +15V  
= –15V  
DD  
SS  
The iCMOS (industrial CMOS) modular manufacturing  
process combines high voltage CMOS (complementary metal-  
oxide semiconductor) and bipolar technologies. It enables the  
development of a wide range of high performance analog ICs  
capable of 33 V operation in a footprint that no other generation  
of high voltage parts has been able to achieve. Unlike analog ICs  
using conventional CMOS processes, iCMOS components can  
tolerate high supply voltages while providing increased perfor-  
mance, dramatically lower power consumption, and reduced  
package size.  
V
V
= +12V  
= 0V  
DD  
SS  
0.1  
0
V
V
= +5V  
= –5V  
DD  
SS  
–15  
–10  
–5  
0
5
10  
15  
V
(V)  
S
Figure 2. Source-to-Drain Charge Injection vs. Source Voltage  
Rev. A  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
www.analog.com  
Fax: 781.461.3113 ©2006—2009 Analog Devices, Inc. All rights reserved.  
 
 
 
 

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