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ADG1208YRZ

更新时间: 2024-09-21 21:21:39
品牌 Logo 应用领域
亚德诺 - ADI 光电二极管
页数 文件大小 规格书
21页 423K
描述
Low Capacitance, 8-Channel, ±15 V/+12 V iCMOS® Multiplexer

ADG1208YRZ 数据手册

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Low Capacitance, 4-/8-Channel,  
15 V/+12 V iCMOS Multiplexers  
Data Sheet  
ADG1208/ADG1209  
FEATURES  
FUNCTIONAL BLOCK DIAGRAMS  
<1 pC charge injection over full signal range  
1 pF off capacitance  
33 V supply range  
ADG1208  
ADG1209  
S1  
S1A  
S4A  
DA  
DB  
120 Ω on resistance  
Fully specified at 15 V/+12 V  
3 V logic compatible inputs  
Rail-to-rail operation  
Break-before-make switching action  
Available in a 16-lead TSSOP, a 16-lead LFCSP, and a  
16-lead SOIC  
D
S1B  
S4B  
S8  
1-OF-8  
DECODER  
1-OF-4  
DECODER  
Typical power consumption < 0.03 µW  
A0 A1 A2 EN  
A0 A1 EN  
APPLICATIONS  
Figure 1.  
Audio and video routing  
Automatic test equipment  
Data-acquisition systems  
Battery-powered systems  
Sample-and-hold systems  
Communication systems  
GENERAL DESCRIPTION  
The ADG1208 and ADG1209 are monolithic, iCMOS® analog  
multiplexers comprising eight single channels and four differential  
channels, respectively. The ADG1208 switches one of eight inputs  
to a common output as determined by the 3-bit binary address  
lines A0, A1, and A2. The ADG1209 switches one of four  
differential inputs to a common differential output as determined  
by the 2-bit binary address lines A0 and A1. An EN input on  
both devices enable or disable the device. When disabled, all  
channels are switched off. When on, each channel conducts  
equally well in both directions and has an input signal range  
that extends to the supplies.  
The ultralow capacitance and exceptionally low charge injection  
of these multiplexers make them ideal solutions for data acquisition  
and sample-and-hold applications, where low glitch and fast  
settling are required. Figure 2 shows that there is minimum  
charge injection over the entire signal range of the device.  
iCMOS construction also ensures ultralow power dissipation,  
making the devices ideally suited for portable and battery-  
powered instruments.  
1.0  
MUX (SOURCE TO DRAIN)  
T
= 25°C  
A
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
The industrial CMOS (iCMOS) modular manufacturing  
process combines high voltage complementary metal-oxide  
semiconductor (CMOS) and bipolar technologies. It enables the  
development of a wide range of high performance analog ICs  
capable of 33 V operation in a footprint that no other generation  
of high voltage devices has been able to achieve. Unlike analog  
ICs using conventional CMOS processes, iCMOS components  
can tolerate high supply voltages while providing increased  
performance, dramatically lower power consumption, and  
reduced package size.  
V
V
= +15V  
= –15V  
DD  
SS  
V
V
= +12V  
= 0V  
DD  
SS  
0.1  
0
V
V
= +5V  
= –5V  
DD  
SS  
–15  
–10  
–5  
0
5
10  
15  
V
(V)  
S
Figure 2. Source to Drain Charge Injection vs. Source Voltage  
Rev. E  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2006–2016 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 

ADG1208YRZ 替代型号

型号 品牌 替代类型 描述 数据表
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