Low Capacitance, 4-/8-Channel,
15 V/+12 V iCMOS Multiplexers
Data Sheet
ADG1208/ADG1209
FEATURES
FUNCTIONAL BLOCK DIAGRAMS
<1 pC charge injection over full signal range
1 pF off capacitance
33 V supply range
ADG1208
ADG1209
S1
S1A
S4A
DA
DB
120 Ω on resistance
Fully specified at 15 V/+12 V
3 V logic compatible inputs
Rail-to-rail operation
Break-before-make switching action
Available in a 16-lead TSSOP, a 16-lead LFCSP, and a
16-lead SOIC
D
S1B
S4B
S8
1-OF-8
DECODER
1-OF-4
DECODER
Typical power consumption < 0.03 µW
A0 A1 A2 EN
A0 A1 EN
APPLICATIONS
Figure 1.
Audio and video routing
Automatic test equipment
Data-acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
GENERAL DESCRIPTION
The ADG1208 and ADG1209 are monolithic, iCMOS® analog
multiplexers comprising eight single channels and four differential
channels, respectively. The ADG1208 switches one of eight inputs
to a common output as determined by the 3-bit binary address
lines A0, A1, and A2. The ADG1209 switches one of four
differential inputs to a common differential output as determined
by the 2-bit binary address lines A0 and A1. An EN input on
both devices enable or disable the device. When disabled, all
channels are switched off. When on, each channel conducts
equally well in both directions and has an input signal range
that extends to the supplies.
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Figure 2 shows that there is minimum
charge injection over the entire signal range of the device.
iCMOS construction also ensures ultralow power dissipation,
making the devices ideally suited for portable and battery-
powered instruments.
1.0
MUX (SOURCE TO DRAIN)
T
= 25°C
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
The industrial CMOS (iCMOS) modular manufacturing
process combines high voltage complementary metal-oxide
semiconductor (CMOS) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage devices has been able to achieve. Unlike analog
ICs using conventional CMOS processes, iCMOS components
can tolerate high supply voltages while providing increased
performance, dramatically lower power consumption, and
reduced package size.
V
V
= +15V
= –15V
DD
SS
V
V
= +12V
= 0V
DD
SS
0.1
0
V
V
= +5V
= –5V
DD
SS
–15
–10
–5
0
5
10
15
V
(V)
S
Figure 2. Source to Drain Charge Injection vs. Source Voltage
Rev. E
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