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ADG1208YCPZ-REEL

更新时间： 2024-09-21 03:12:55
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亚德诺 - ADI 复用器开关复用器或开关信号电路
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20页 453K
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Low Capacitance, 4-/8-Channel +-15 V/+12 V iCMOS Multiplexers

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ADG1208YCPZ-REEL 数据手册

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Low Capacitance, 4-/8-Channel  
± ±1 ꢀ/ꢁ±ꢂ ꢀ iCMOS™ Multiplexers  
ADG±ꢂ08/ADG±ꢂ09  
FUNCTIONAL BLOCK DIAGRAMS  
FEATURES  
<1 pC charge injection over full signal range  
1 pF off capacitance  
33 V supply range  
ADG1208  
ADG1209  
S1  
S1A  
S4A  
DA  
DB  
120 Ω on resistance  
Fully specified at 1ꢀ V/+12 V  
3 V logic compatible inputs  
Rail-to-rail operation  
Break-before-make switching action  
Available in 16-lead TSSOP and 4 mm × 4 mm LFCSP_VQ  
Typical power consumption < 0.03 μW  
D
S1B  
S4B  
S8  
1-OF-8  
DECODER  
1-OF-4  
DECODER  
APPLICATIONS  
A0 A1 A2 EN  
A0 A1 EN  
Audio and video routing  
Automatic test equipment  
Data-acquisition systems  
Battery-powered systems  
Sample-and-hold systems  
Communication systems  
Figure 1.  
GENERAL DESCRIPTION  
The ADG1208 and ADG1209 are monolithic, iCMOS analog  
multiplexers comprising eight single channels and four differential  
channels, respectively. The ADG1208 switches one of eight  
inputs to a common output as determined by the 3-bit binary  
address lines A0, A1, and A2. The ADG1209 switches one of  
four differential inputs to a common differential output as  
determined by the 2-bit binary address lines A0 and A1. An  
EN input on both devices is used to enable or disable the device.  
When disabled, all channels are switched off. When on, each  
channel conducts equally well in both directions and has an  
input signal range that extends to the supplies.  
The ultralow capacitance and exceptionally low charge injection  
of these multiplexers make them ideal solutions for data  
acquisition and sample-and-hold applications, where low glitch  
and fast settling are required. Figure 2 shows that there is  
minimum charge injection over the entire signal range of the  
device. iCMOS construction also ensures ultralow power  
dissipation, making the parts ideally suited for portable and  
battery powered instruments.  
1.0  
MUX (SOURCE TO DRAIN)  
T
= 25°C  
A
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
The iCMOS (industrial CMOS) modular manufacturing  
process combines high voltage CMOS (complementary metal-  
oxide semiconductor) and bipolar technologies. It enables the  
development of a wide range of high performance analog ICs  
capable of 33 V operation in a footprint that no other generation  
of high voltage parts has been able to achieve. Unlike analog ICs  
using conventional CMOS processes, iCMOS components can  
tolerate high supply voltages while providing increased  
performance, dramatically lower power consumption, and  
reduced package size.  
V
V
= +15V  
= –15V  
DD  
SS  
V
V
= +12V  
= 0V  
DD  
SS  
0.1  
0
V
V
= +5V  
= –5V  
DD  
SS  
–15  
–10  
–5  
0
5
10  
15  
V
(V)  
S
Figure 2. Source to Drain Charge Injection vs. Source Voltage  
Rev. 0  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
© 2006 Analog Devices, Inc. All rights reserved.  
 
 
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