Low Capacitance, 16- and 8-Channel
1ꢀ ꢁV/1ꢂ ꢁ iCMOS™ Multiplexers
ADG1ꢂ06VADG1ꢂ07
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
<1 pC charge injection over full signal range
1.5 pF off capacitance
33 V supply range
ADG1206
ADG1207
S1
S1A
S8A
DA
DB
120 Ω on resistance
Fully specified at 15 V/+12 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
28-lead TSSOP and 32-lead, 5 mm × 5 mm LFCSP_VQ
D
S1B
S8B
S16
1-OF-16
DECODER
1-OF-8
DECODER
APPLICATIONS
Audio and video routing
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Communication systems
A0 A1 A2 A3 EN
A0 A1 A2 EN
Figure 1.
GENERAL DESCRIPTION
The ultralow capacitance and exceptionally low charge injection
of these multiplexers make them ideal solutions for data
acquisition and sample-and-hold applications, where low glitch
and fast settling are required. Figure 2 shows that there is
minimum charge injection over the entire signal range of the
device. iCMOS construction also ensures ultralow power
dissipation, making the parts ideally suited for portable and
battery-powered instruments.
The ADG1206 and ADG1207 are monolithic iCMOS analog
multiplexers comprising sixteen single channels and eight
differential channels, respectively. The ADG1206 switches one
of sixteen inputs to a common output, as determined by the 4-
bit binary address lines A0, A1, A2, and A3. The ADG1207
switches one of eight differential inputs to a common
differential output, as determined by the 3-bit binary address
lines A0, A1, and A2. An EN input on both devices is used to
enable or disable the device. When disabled, all channels are
switched off. When on, each channel conducts equally well in
both directions and has an input signal range that extends to the
supplies.
1.0
MUX (SOURCE TO DRAIN)
T
= 25°C
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
V
= +15V
= –15V
DD
SS
The iCMOS (industrial CMOS) modular manufacturing
process combines high voltage CMOS (complementary metal-
oxide semiconductor) and bipolar technologies. It enables the
development of a wide range of high performance analog ICs
capable of 33 V operation in a footprint that no other generation
of high voltage parts has been able to achieve. Unlike analog ICs
using conventional CMOS processes, iCMOS components can
tolerate high supply voltages while providing increased perfor-
mance, dramatically lower power consumption, and reduced
package size.
V
V
= +12V
= 0V
DD
SS
0.1
0
V
V
= +5V
= –5V
DD
SS
–15
–10
–5
0
5
10
15
V
(V)
S
Figure 2. Source-to-Drain Charge Injection vs. Source Voltage
Rev. 0
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