Datasheet > ADG1201BRJZ-R2

ADG1201BRJZ-R2

更新时间： 2024-02-07 20:32:28

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
16页	292K
描述
Low Capacitance, Low Charge Injection, 【15 V/+12 V iCMOS SPST in SOT-23

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ADG1201BRJZ-R2 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	TSOP, TSOP6,.11,37
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	1.47	Samacsys Description：	Analog Devices ADG1201BRJZ-R2, Analogue Switch Single SPST, 12 V, 6-Pin SOT-23
JESD-30 代码：	R-PDSO-G6	JESD-609代码：	e4
湿度敏感等级：	1	正常位置：	NC
功能数量：	1	端子数量：	6
最大通态电阻 (Ron)：	625 Ω	最高工作温度：	125 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP	封装等效代码：	TSOP6,.11,37
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：	260	电源：	12/+-15 V
认证状态：	Not Qualified	子类别：	Multiplexer or Switches
表面贴装：	YES	最长接通时间：	250 ns
切换：	BREAK-BEFORE-MAKE	技术：	CMOS
温度等级：	AUTOMOTIVE	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	0.95 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

ADG1201BRJZ-R2 数据手册

Low Capacitance, Low Charge Injection,

± ±1 ꢀV/±ꢁ ꢀ iCMOS SPST in SOT-ꢁ3

ADG±ꢁ0±VADG±ꢁ0ꢁ

FUNCTIONAL BLOCK DIAGRAM

FEATURES

2.4 pF off capacitance

ADG1201

ADG1202

<1 pC charge injection

Low leakage; 0.6 nA maximum @ 85°C

120 Ω on resistance

Fully specified at 15 V, +12 V

No V_Lsupply required

3 V logic-compatible inputs

Rail-to-rail operation

SWITCHES SHOWN FOR A LOGIC “1” INPUT

Figure 1.

6-lead SOT-23 package

APPLICATIONS

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Audio signal routing

Video signal routing

Communication systems

GENERAL DESCRIPTION

iCMOS construction ensures ultralow power dissipation,

making the parts ideally suited for portable and battery-

powered instruments.

The ADG1201/ADG1202 are monolithic complementary

metal-oxide semiconductor (CMOS) devices containing

an SPST switch designed in an iCMOS® (industrial CMOS)

process. iCMOS is a modular manufacturing process

combining high voltage CMOS and bipolar technologies.

It enables the development of a wide range of high perform-

ance analog ICs capable of 33 V operation in a footprint

that no previous generation of high voltage parts has been

able to achieve. Unlike analog ICs using conventional

CMOS processes, iCMOS components can tolerate high

supply voltages while providing increased performance,

dramatically lower power consumption, and reduced

package size.

The ADG1201/ADG1202 contain a single-pole/single-throw

(SPST) switch. Figure 1 shows that with a logic input of 1, the

switch of the ADG1201 is closed and that of the ADG1202 is

open. Each switch conducts equally well in both directions when

on and has an input signal range that extends to the supplies. In

the off condition, signal levels up to the supplies are blocked.

PRODUCT HIGHLIGHTS

1. Ultralow capacitance.

2. <1 pC charge injection.

3. Ultralow leakage.

4. 3 V logic-compatible digital inputs: V_IH= 2.0 V, V_IL= 0.8 V.

5. No V_Llogic power supply required.

6. SOT-23 package.

The ultralow capacitance and charge injection of these

switches make them ideal solutions for data acquisition

and sample-and-hold applications, where low glitch and fast

settling are required. Fast switching speed coupled with

high signal bandwidth make the parts suitable for video

signal switching.

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Fax: 781.461.3113

www.analog.com

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与ADG1201BRJZ-R2相关器件

型号	品牌	获取价格	描述	数据表
ADG1201BRJZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, 【15 V/
ADG1202	ADI	获取价格	Low Capacitance, Low Charge Injection, 【15 V/
ADG1202BRJZ-R2	ADI	获取价格	Low Capacitance, Low Charge Injection, 【15 V/
ADG1202BRJZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, 【15 V/
ADG1204	ADI	获取价格	2 pF Off Capacitance, 1 pC Charge Injection, +-15 V/12 V 4:1 iCMOS Multiplexer
ADG1204_09	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1204YCP	ADI	获取价格	2 pF Off Capacitance, 1 pC Charge Injection, +-15 V/12 V 4:1 iCMOS Multiplexer
ADG1204YCPZ-500RL7	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1204YCPZ-REEL7	ADI	获取价格	Low Capacitance, Low Charge Injection, Â±15 V
ADG1204YRU	ADI	获取价格	2 pF Off Capacitance, 1 pC Charge Injection, +-15 V/12 V 4:1 iCMOS Multiplexer

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