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ADF4107BRU-REEL7 PDF预览

ADF4107BRU-REEL7

更新时间: 2024-01-31 19:42:32
品牌 Logo 应用领域
亚德诺 - ADI 光电二极管信息通信管理
页数 文件大小 规格书
20页 752K
描述
PLL Frequency Synthesizer

ADF4107BRU-REEL7 技术参数

Source Url Status Check Date:2013-05-01 14:56:35.524是否无铅: 含铅
是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:MO-153AB, TSSOP-16
针数:16Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.4Is Samacsys:N
模拟集成电路 - 其他类型:PLL FREQUENCY SYNTHESIZERJESD-30 代码:R-PDSO-G16
JESD-609代码:e0长度:5 mm
湿度敏感等级:1功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:PLL or Frequency Synthesis Circuits最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:BICMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:4.4 mmBase Number Matches:1

ADF4107BRU-REEL7 数据手册

 浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第14页浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第15页浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第16页浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第18页浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第19页浏览型号ADF4107BRU-REEL7的Datasheet PDF文件第20页 
ADF4107  
Initialization Latch Method  
Apply VDD  
Program the initialization latch (11 in two LSBs of input word).  
Make sure that the F1 bit is programmed to 0.  
Note that there is an enable feature on the timer counter. It is  
enabled when Fastlock Mode 2 is chosen by setting the fastlock  
mode bit (DB10) in the function latch to 1.  
.
Charge Pump Currents  
Next, do a function latch load (10 in two LSBs of the control  
word), making sure that the F1 bit is programmed to a 0.  
Then do an R load (00 in two LSBs).  
CPI3, CPI2, and CPI1 program Current Setting 1 for the charge  
pump. CPI6, CPI5, and CPI4 program Current Setting 2 for the  
charge pump. The truth table is given in Figure 25.  
Then do an AB load (01 in two LSBs).  
When the Initialization Latch is loaded, the following occurs:  
Prescaler Value  
1. The function latch contents are loaded.  
P2 and P1 in the function latch set the prescaler values. The  
prescaler value should be chosen so that the prescaler output  
frequency is always less than or equal to 300 MHz. Thus, with  
an RF frequency of 4 GHz, a prescaler value of 16/17 is valid but  
a value of 8/9 is not valid.  
2. An internal pulse resets the R, AB, and timeout counters to  
load-state conditions and also three-states the charge  
pump. Note that the prescaler band gap reference and the  
oscillator input buffer are unaffected by the internal reset  
pulse, allowing close phase alignment when counting  
resumes.  
3. Latching the first AB counter data after the initialization  
word will activate the same internal reset pulse. Successive  
AB loads will not trigger the internal reset pulse unless  
there is another initialization.  
PD Polarity  
This bit sets the phase detector polarity bit. See Figure 25.  
CP Three-State  
CE Pin Method  
This bit controls the CP output pin. With the bit set high, the CP  
output is put into three-state. With the bit set low, the CP output  
is enabled.  
Apply VDD  
.
Bring CE low to put the device into power-down. This is an  
asychronous power-down in that it happens immediately.  
Program the function latch (10).  
Program the R counter latch (00).  
Program the AB counter latch (01).  
Initialization Latch  
The initialization latch is programmed when C2 and C1 are set  
to 1 and 1. This is essentially the same as the function latch  
(programmed when C2, C1 = 1, 0).  
Bring CE high to take the device out of power-down. The R and  
AB counters will now resume counting in close alignment.  
Note that after CE goes high, a duration of 1 µs may be required  
for the prescaler band gap voltage and oscillator input buffer  
bias to reach steady state.  
However, when the initialization latch is programmed an  
additional internal reset pulse is applied to the R and AB  
counters. This pulse ensures that the AB counter is at load point  
when the AB counter data is latched and the device will begin  
counting in close phase alignment.  
CE can be used to power the device up and down in order to  
check for channel activity. The input register does not need to  
be reprogrammed each time the device is disabled and enabled  
as long as it has been programmed at least once after VDD was  
initially applied.  
If the latch is programmed for synchronous power-down (CE  
pin is high; PD1 bit is high; PD2 bit is low), the internal pulse  
also triggers this power-down. The prescaler reference and the  
oscillator input buffer are unaffected by the internal reset pulse  
and so close phase alignment is maintained when counting  
resumes.  
Counter Reset Method  
Apply VDD  
.
When the first AB counter data is latched after initialization, the  
internal reset pulse is again activated. However, successive AB  
counter loads after this will not trigger the internal reset pulse.  
Do a Function Latch Load (10 in two LSBs). As part of this,  
load 1 to the F1 bit. This enables the counter reset.  
Do an R counter load (00 in two LSBs).  
Do an AB counter load (01 in two LSBs).  
Do a Function latch load (10 in two LSBs). As part of this,  
load 0 to the F1 bit. This disables the counter reset.  
Device Programming after Initial Power-Up  
After initially powering up the device, there are three ways to  
program the device.  
This sequence provides the same close alignment as the  
initialization method. It offers direct control over the internal  
reset. Note that counter reset holds the counters at load point  
and three-states the charge pump, but does not trigger  
synchronous power-down.  
Rev. 0 | Page 17 of 20  
 

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