ADF4002BCPZ-RL7

更新时间： 2024-02-10 08:29:20

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
24页	457K
描述
Phase Detector/Frequency Synthesizer

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ADF4002BCPZ-RL7 数据手册

ADF4002

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless otherwise noted.

Table 3.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Parameter

AV_DDto GND¹

Rating

–0.3 V to +3.6 V

–0.3 V to +0.3 V

–0.3 V to +5.8 V

–0.3 V to VDD + 0.3 V

–0.3 V to V_P+ 0.3 V

–0.3 V to VDD + 0.3 V

AV_DDto DV_DD

V_Pto GND

V_Pto AV_DD

Digital I/O Voltage to GND

Analog I/O Voltage to GND

REFIN, RF_INA, RF_INB to GND

Operating Temperature Range

Industrial (B Version)

Storage Temperature Range

Maximum Junction Temperature

Lead Temperature, Soldering

Vapor Phase (60 sec)

Infrared (15 sec)

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

–40°C to +85°C

–65°C to +125°C

150°C

THERMAL CHARACTERISTICS

Table 4. Thermal Impedance

215°C

220°C

Package Type

θ_JA

Unit

°C/W

Transistor Count

TSSOP

LFCSP_VQ

150.4

122

CMOS

Bipolar

6425

303

¹GND = AGND = DGND = 0 V.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. 0 | Page 5 of 24

1 2 3 456 7 8...24

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