November 9, 2009
ADC08D1000QML
High Performance, Low Power, Dual 8-Bit, 1 GSPS A/D
Converter
General Description
Features
The ADC08D1000 is a dual, low power, high performance
CMOS analog-to-digital converter that digitizes signals to 8
bits resolution at sampling rates up to 1.2 GSPS. Consuming
a typical 1.6 Watts at 1 GSPS from a single 1.9 Volt supply,
this device is guaranteed to have no missing codes over the
full operating temperature range. The unique folding and in-
terpolating architecture, the fully differential comparator de-
sign, the innovative design of the internal sample-and-hold
amplifier and the self-calibration scheme enable a very flat
response of all dynamic parameters beyond Nyquist, produc-
ing a high 7.4 Effective Number Of Bits (ENOB) with a 498
MHz input signal and a 1 GHz sample rate while providing a
10-18 Bit Error Rate ( B.E.R.). Output formatting is offset binary
and the Low Voltage Differential Signaling (LVDS) digital out-
puts are compliant with IEEE 1596.3-1996, with the exception
of an adjustable common mode voltage between 0.8V and
1.13V.
Total Ionizing Dose
300 krad(Si)
>120 MeV/mg/cm2
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Single Event Latch-Up
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Internal Sample-and-Hold
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Single +1.9V ±0.1V Operation
Choice of SDR or DDR output clocking
Interleave Mode for 2x Sampling Rate
Multiple ADC Synchronization Capability
Guaranteed No Missing Codes
Serial Interface for Extended Control
Fine Adjustment of Input Full-Scale Range and Offset
Duty Cycle Corrected Sample Clock
Key Specifications
Resolution
Max Conversion Rate
Bit Error Rate
ENOB @ 498 MHz Input
8 Bits
1 GSPS (min)
10-18 (typ)
7.4 Bits (typ)
±0.15 LSB (typ)
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Each converter has a 1:2 demultiplexer that feeds two LVDS
buses and reduces the output data rate on each bus to half
the sampling rate. The two converters can be interleaved and
used as a single 2 GSPS ADC.
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DNL
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Power Consumption
The converter typically consumes less than 3.5 mW in the
Power Down Mode and is available in a 128-lead, thermally
enhanced multi-layer ceramic quad package and operates
over the Military (-55°C ≤ TA ≤ +125°C) temperature range.
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Operating
Power Down Mode
1.6 W (typ)
3.5 mW (typ)
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This part will work in a radiation environment, with ex-
cellent results, provided the guidelines in applications
section 2.1 are followed.
Applications
Communication Satellites/Systems
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Direct RF Down Conversion
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© 2009 National Semiconductor Corporation
201802
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