Datasheet > 放大器电路 > 运算放大器> AD647SE/883BH

AD647SE/883BH

更新时间： 2024-11-29 22:22:07

品牌	Logo	应用领域
亚德诺 - ADI		运算放大器放大器电路
页数	文件大小	规格书
6页	381K
描述
Ultralow Drift, Dual BiFET Op Amp

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数据手册

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AD647SE/883BH 数据手册

Ultralow Drift,

Dual BiFET Op Amp

AD647

FEATURES

Low Offset Voltage Drift

Matched Offset Voltage

Matched Offset Voltage Over Temperature

Matched Bias Currents

Crosstalk: –124 dB at 1 kHz

Low Bias Current: 35 pA max Warmed Up

Low Offset Voltage: 250 ␮V max

Low Input Voltage Noise: 2 ␮V p-p

High Open Loop Gain: 108 dB

Low Quiescent Current: 2.8 mA max

Low Total Harmonic Distortion

Standard Dual Amplifier Pinout

Available in Hermetic Metal Can Package, Hermetic

Surface Mount (20-Pin LCC) and Chip Form

MIL-STD-883B Processing Also Available

Single Version Available: AD547

PRODUCT DESCRIPTION

The AD647 is an ultralow drift, dual JFET amplifier that com-

bines high performance and convenience in a single package.

The AD647 uses the most advanced ion-implantation and laser

wafer drift trimming technologies to achieve the highest perfor-

mance currently available in a dual JFET. Ion-implantation per-

mits the fabrication of matched JFETs on a monolithic bipolar

chip. Laser wafer drift trimming trims both the initial offset volt-

age and its drift with temperature to provide offsets as low as

100 µV (250 µV max) and drifts of 2.5 µV/°C max.

PRODUCT HIGHLIGHTS

1. The AD647 is guaranteed and tested to tight matching speci-

fications to ensure high performance and to eliminate the se-

lection and matching of single devices.

2. Laser wafer drift trimming reduces offset voltage and offset

In addition to outstanding individual amplifier performance, the

AD647 offers guaranteed and tested matching performance on

critical parameters such as offset voltage, offset voltage drift and

bias currents.

voltage drifts to 250 µV and 2.5 µV/°C max.

3. Voltage noise is guaranteed at 4 µV p-p max (0.1 Hz to

10 Hz) on K, L and S grades.

4. Bias current (35 pA K, L, S; 75 pA J) is specified after five

minutes of operation.

The high level of performance makes the AD647 especially well

suited for high precision instrumentation amplifier applications

that previously would have required the costly selection and

matching of space wasting single amplifiers.

5. Total supply current is a low 2.8 mA max.

6. High open loop gain ensures high linearity in precision instru-

mentation amplifier applications.

The AD647 is offered in four performance grades, three com-

mercial (the J, K and L) and one extended (the S). All are sup-

plied in hermetically sealed 8-pin TO-99 packages and are

available processed to MIL-STD-883B. The LCC version is

also available processed to MIL-STD-883B.

7. The standard dual amplifier pinout permits the direct substi-

tution of the AD647 for lower performance devices.

8. The AD647 is available in chip form.

REV. A

Information furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assumed by Analog Devices for its

use, nor for any infringements of patents or other rights of third parties

which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 617/329-4700

Fax: 617/326-8703

12 3 4 5 6

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与AD647SE/883BH相关器件

型号	品牌	获取价格	描述	数据表
AD647SH	ADI	获取价格	Ultralow Drift, Dual BiFET Op Amp
AD647SH/883B	ROCHESTER	获取价格	DUAL OP-AMP, 1500 uV OFFSET-MAX, 1 MHz BAND WIDTH, MBCY8, HERMETIC SEALED, METAL CAN, TO-9
AD648	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648A	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648AH	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648AQ	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648AQ	ROCHESTER	获取价格	DUAL OP-AMP, 3000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8, CERDIP-8
AD648B	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648BH	ADI	获取价格	Dual Precision, Low Power BiFET Op Amp
AD648BH/+	ROCHESTER	获取价格	IC,OP-AMP,DUAL,BIPOLAR/JFET,CAN,8PIN,METAL

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