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AD5379ABCZ PDF预览

AD5379ABCZ

更新时间: 2024-02-23 10:48:29
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
29页 571K
描述
40-Channel, 14-Bit, Parallel

AD5379ABCZ 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:BGA, BGA108,12X12,40针数:108
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.64
最大模拟输出电压:14.5 V最小模拟输出电压:-1 V
转换器类型:D/A CONVERTER输入位码:BINARY
输入格式:SERIAL, PARALLEL, WORDJESD-30 代码:S-PBGA-B108
JESD-609代码:e1长度:13 mm
最大线性误差 (EL):0.0183%湿度敏感等级:3
标称负供电电压:-12 V位数:14
功能数量:1端子数量:108
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA108,12X12,40封装形状:SQUARE
封装形式:GRID ARRAY峰值回流温度(摄氏度):260
电源:3/5,+-12/+-15 V认证状态:Not Qualified
座面最大高度:1.85 mm最大稳定时间:30 µs
标称安定时间 (tstl):20 µs子类别:Other Converters
标称供电电压:12 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:40宽度:13 mm
Base Number Matches:1

AD5379ABCZ 数据手册

 浏览型号AD5379ABCZ的Datasheet PDF文件第3页浏览型号AD5379ABCZ的Datasheet PDF文件第4页浏览型号AD5379ABCZ的Datasheet PDF文件第5页浏览型号AD5379ABCZ的Datasheet PDF文件第7页浏览型号AD5379ABCZ的Datasheet PDF文件第8页浏览型号AD5379ABCZ的Datasheet PDF文件第9页 
AD5379  
Parameter  
A Version1  
Unit  
Test Conditions/Comments2  
Power Supply Sensitivity2  
∆ Full Scale/∆ VDD  
∆ Full Scale/∆ VSS  
∆ Full Scale/∆ VCC  
ICC  
−75  
−75  
−90  
5
28  
23  
dB typ  
dB typ  
dB typ  
mA max  
mA max  
mA max  
VCC = 5.5 V, VIH = VCC, VIL = GND  
Outputs unloaded (typically 20 mA)  
Outputs unloaded (typically 15 mA)  
IDD  
ISS  
Power Dissipation  
Power Dissipation Unloaded (P)  
Power Dissipation Loaded (PTOTAL  
Junction Temperature  
850  
2000  
130  
mW max  
mW max  
°C max  
VDD = 16.5 V, VSS = −16.5 V  
)
PTOTAL = P + Σ(VDD − VO) × ISOURCE + Σ(VO − VSS) × ISINK  
3
TJ = TA + PTOTAL × θJ  
1 Temperature range for A Version: −40°C to +85°C. Typical specifications are at 25°C.  
2 Guaranteed by design and characterization, not production tested.  
3 Where θJ represents the package thermal impedance.  
AC CHARACTERISTICS  
VCC = 2.7 V to 5.5 V; VDD = 11.4 V to 16.5 V; VSS = −11.4 V to −16.5 V; VREF(+) = 5 V; VREF(−) = −3.5 V; AGND = DGND = REFGND = 0 V;  
BIAS = 5 V; CL = 220 pF; RL = 11 kΩ to 3 V; gain = 1; offset = 0 V.  
V
Table 3.  
Parameter  
A Version1  
Unit  
Test Conditions/Comments  
DYNAMIC PERFORMANCE  
Output Voltage Settling Time  
20  
30  
1
20  
15  
100  
40  
10  
0.1  
1
μs typ  
μs max  
Full-scale change to 1/2 LSB  
DAC latch contents alternately loaded with all 0s and all 1s  
Slew Rate  
V/μs typ  
nV-s typ  
mV max  
dB typ  
nV-s typ  
nV-s typ  
nV-s typ  
nV-s typ  
nV/(Hz)1/2 typ  
Digital-to-Analog Glitch Energy  
Glitch Impulse Peak Amplitude  
Channel-to-Channel Isolation  
DAC-to-DAC Crosstalk  
VREF(+) = 2 V p-p, (1 VBIAS) 1 kHz, VREF(−) = −1 V  
Between DACs inside a group (see the Terminology section)  
Between DACs from different groups  
Digital Crosstalk  
Digital Feedthrough  
Output Noise Spectral Density @ 1 kHz  
Effect of input bus activity on DAC output under test  
VREF(+) = VREF(−) = 0 V  
350  
1 Guaranteed by design and characterization, not production tested.  
Rev. B | Page 5 of 28  
 
 

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