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AD5258BRMZ50-R7 PDF预览

AD5258BRMZ50-R7

更新时间： 2024-01-11 20:14:18
品牌 Logo 应用领域
亚德诺 - ADI 电位器
页数 文件大小 规格书
24页 534K
描述
Nonvolatile, I2C-Compatible 64-Position, Digital Potentiometer

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AD5258BRMZ50-R7 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TSSOP
包装说明：TSSOP, TSSOP10,.19,20针数：10
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.32
其他特性：NONVOLATILE MEMORY标称带宽：0.19 kHz
控制接口：2-WIRE SERIAL转换器类型：DIGITAL POTENTIOMETER
JESD-30 代码：S-PDSO-G10JESD-609代码：e3
长度：3 mm湿度敏感等级：1
功能数量：1位置数：64
端子数量：10最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP10,.19,20
封装形状：SQUARE封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260电源：3/5 V
认证状态：Not Qualified电阻定律：LINEAR
最大电阻容差：30%最大电阻器端电压：5.5 V
最小电阻器端电压：座面最大高度：1.1 mm
子类别：Digital Potentiometers标称供电电压：3 V
表面贴装：YES标称温度系数：200 ppm/ °C
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
标称总电阻：50000 Ω宽度：3 mm
Base Number Matches：1

AD5258BRMZ50-R7 数据手册

 浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第15页浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第16页浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第17页浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第19页浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第20页浏览型号AD5258BRMZ50-R7的Datasheet PDF文件第21页 
AD5258  
Data Sheet  
TOLERANCE READBACK MODES  
Table 15. Traditional Readback of Tolerance (Individually)  
7-Bit Device Address  
7-Bit Device Address  
(See Table 5)  
(See Table 5)  
S
0 SA 0 0 1 1 1 1 1 0 SA S  
1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P  
Slave Address Byte  
Instruction Byte  
Slave Address Byte  
Sign + Integer Byte  
↑
Repeat Start  
7-Bit Device Address  
(See Table 5)  
7-Bit Device Address  
(See Table 5)  
S
0 SA 0 0 1 1 1 1 1 1 SA S  
1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P  
Slave Address Byte  
Instruction Byte  
Slave Address Byte  
Decimal Byte  
↑
Repeat Start  
Table 16. Traditional Readback of Tolerance (Consecutively)  
7-Bit Device Address  
7-Bit Device Address  
S
(See Table 5)  
0 SA 0 0 1 1 1 1 1 0 SA S  
(See Table 5)  
1 SA D7 D6 D5 D4 D3 D2 D1 D0 MA D7 D6 D5 D4 D3 D2 D1 D0 NA P  
Slave Address Byte  
Instruction Byte  
Slave Address Byte  
Sign + Integer Byte  
Decimal Byte  
↑
Repeat Start  
Calculating RAB Tolerance Stored in Read-Only Memory  
A
A
A
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
D7  
D6  
D5  
D4  
D3  
D2  
–6  
D1  
–7  
D0  
–8  
6
5
4
3
2
1
0
–1  
2
–2  
2
–3  
2
–4  
2
–5  
2
SIGN  
2
2
2
2
2
2
2
2
2
2
SIGN  
SEVEN BITS FOR AN INTEGER NUMBER  
EIGHT BITS FORA DECIMAL NUMBER  
Figure 39. Format of Stored Tolerance in Sign Magnitude Format with Bit Position Descriptions  
(Unit is Percent; Only Data Bytes are Shown)  
The AD5258 features a patented RAB tolerance storage in the  
nonvolatile memory. Tolerance is stored in the memory during  
factory production and can be read by users at any time. The  
knowledge of stored tolerance allows users to accurately calcu-  
late RAB. This feature is valuable for precision, rheostat mode,  
and open-loop applications where knowledge of absolute  
resistance is critical.  
In the first memory location, the MSB is designated for the sign  
(0 = + and 1 = −) and the seven LSBs are designated for the integer  
portion of the tolerance. In the second memory location, all eight  
data bits are designated for the decimal portion of tolerance. Note  
that the decimal portion has a limited accuracy of only 0.1%. For  
example, if the rated RAB = 10 kΩ and the data readback from  
Address 11110 shows 0001 1100 and from Address 11111 shows  
0000 1111, the tolerance can be calculated as  
The stored tolerance resides in the read-only memory and is  
expressed as a percentage. The tolerance is stored in two memory  
location bytes in sign magnitude binary form (see Figure 39). The  
two EEPROM address bytes are 11110 (sign + integer) and 11111  
(decimal number). The two bytes can be individually accessed  
with two separate commands (see Table 15). Alternatively, read-  
back of the first byte followed by the second byte can be done  
in one command (see Table 16). In the latter case, the memory  
pointer automatically increments from the first to the second  
EEPROM location (increments from 11110 to 11111) if read  
consecutively.  
MSB: 0 = +  
Next 7 MSB: 001 1100 = 28  
8 LSB: 0000 1111 = 15 × 2–8 = 0.06  
Tolerance = 28.06%  
Rounded Tolerance = 28.1% and therefore  
RAB_ACTUAL = 12.810 kΩ  
Rev. D | Page 18 of 24  
 
 
 
 
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