Datasheet > ACTS245KTR-T

ACTS245KTR-T

更新时间： 2024-01-28 19:51:15

品牌	Logo	应用领域
瑞萨 - RENESAS		输出元件逻辑集成电路
页数	文件大小	规格书
3页	87K
描述
ACT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20

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技术参数
数据手册

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ACTS245KTR-T 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	HTS代码：	8542.39.00.01
风险等级：	5	其他特性：	WITH DIRECTION CONTROL
系列：	ACT	JESD-30 代码：	R-CDFP-F20
逻辑集成电路类型：	BUS TRANSCEIVER	位数：	8
功能数量：	1	端口数量：	2
端子数量：	20	最高工作温度：	125 °C
最低工作温度：	-55 °C	输出特性：	3-STATE
输出极性：	TRUE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLATPACK
传播延迟（tpd）：	18 ns	认证状态：	Not Qualified
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子形式：	FLAT	端子位置：	DUAL
Base Number Matches：	1

ACTS245KTR-T 数据手册

ACTS245T

Die Characteristics

DIE DIMENSIONS:

BACKSIDE FINISH:

(2440µm x 2970µm x 533µm ±51µm)

96 x 117 x 21mils ±2mil

Sapphire

PASSIVATION:

METALLIZATION:

Type: Al Si Cu

Type: Silox (S O )

Thickness: 8.0kÅ ±1.0kÅ

Thickness: 10.0kÅ ±2kÅ

WORST CASE CURRENT DENSITY:

SUBSTRATE POTENTIAL:

< 2.0e5 A/cm

Unbiased (Silicon on Sapphire)

TRANSISTOR COUNT:

Bond Pad #20 (V ) First

420

Bond Pad #20 (V ) Uses Two Bond Wires

PROCESS:

Bond Pad #10 (GND) Uses Two Bond Wires

CMOS SOS

Metallization Mask Layout

ACTS245T

DIR

(1)

(19)

VCC VCC

(20) (20)

(2)

A1 (3)

(18) B0

(17) B1

A2 (4)

A3 (5)

A4 (6)

(16) B2

(15) B3

A5 (7)

A6 (8)

(14) B4

(13) B5

(9)

(10)

GND GND

(10)

(11)

(12)

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