Datasheet > ACJ110-8W

ACJ110-8W

更新时间： 2023-12-06 20:09:25

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1156K
描述
瞬态抑制型双向可控硅

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ACJ110-8W 数据手册

ACJ110-8W

JieJie Microelectronics Co., Ltd.

FIG.1 Maximum power dissipation versus RMS

FIG.2: RMS on-state current versus case

on-state current

temperature

I_T(RMS)(A)

P(W)

1.8

1.2

93℃

1.6

1.4

1.2

0.8

0.6

0.4

0.2

0.8

0.6

0.4

0.2

0.4

0.6

I_T(RMS)(A)

0.8

1.2

100

125

T_C(℃)

FIG.3: RMS on-state current versus ambient

temperature (printed circuit board FR4,copper

thickness:35μm)(full cycle)

FIG.4: Surge peak on-state current versus

number of cycles

I_TSM(A)

I_T(RMS)(A)

0.9

T_c=25℃,t_p=20ms,one cycle,sine

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

100

125

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E+5

T_a(℃)

Number

of cycles

FIG.5: On-state characteristics

FIG.6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

t_p<20ms, and corresponding value of I²t

XXXXXXXXXXXXXXXXXXXXXXXXXXXXXXXX

XXXXXXXXXXX

(dI/dt<100A/μs)

I_TSM(A), I²t(A²s)

I_TM(A)

Tj=25℃ typ

Tj=25℃ max

Tj=125℃ typ

100

I_TSM

dI/dt

I²t

0.1

0.01

0.1

0.5

1.5

V_TM(V)

2.5

t_p(ms)

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1 2 345 6 7...10

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