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ACGRAT102-HF PDF预览

ACGRAT102-HF

更新时间: 2024-11-23 14:14:07
品牌 Logo 应用领域
上华 - COMCHIP 光电二极管
页数 文件大小 规格书
4页 1149K
描述
Rectifier Diode,

ACGRAT102-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:1.7
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:AEC-Q101最大重复峰值反向电压:400 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ACGRAT102-HF 数据手册

 浏览型号ACGRAT102-HF的Datasheet PDF文件第2页浏览型号ACGRAT102-HF的Datasheet PDF文件第3页浏览型号ACGRAT102-HF的Datasheet PDF文件第4页 
SMD General Purpose Rectifiers  
ACGRAT101-HF Thru. ACGRAT105-HF  
Glass Passivated Type  
Reverse Voltage: 200 to 1000 Volts  
Forward Current: 1.0 Amp  
RoHS Device  
Halogen Free  
2010  
0.181(4.60)  
0.173(4.40)  
Features  
- Glass passivated cavity-free junction.  
x0.020(x0.50)  
0.091(2.30)  
0.083(2.10)  
- Lead less chip form, no lead damage.  
- Low forward voltage drop.  
- Plastic package has UL 94V-0.  
0.045(1.15)  
0.030(0.75)  
0.045(1.15)  
0.030(0.75)  
- Comply with AEC-Q101  
0.046(1.16)  
0.034(0.86)  
Mechanical data  
- Case: Packed with FRP substrate and epoxy underfilled.  
Dimensions in inches and (millimeter)  
- Terminals: Pure Tin plated (Lead-Free),solderable  
per MIL-STD-750, method 2026.  
Circuit Diagram  
- Polarity: Cathode Band, Laser marking.  
- Weight: 0.02 grams(approx).  
Absolute Maximum Ratings (at Ta=25°C unless otherwise noted)  
ACGRAT  
101-HF  
ACGRAT  
102-HF  
ACGRAT  
103-HF  
ACGRAT  
104-HF  
ACGRAT  
105-HF  
Parameter  
Symbol  
Units  
Repetitive peak reverse voltage  
VRRM  
200  
400  
600  
800  
1000  
V
Peak forward surge current, 8.3ms  
single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
30  
A
Average forward current  
Operating junction temperature  
Storage temperature  
IF(AV)  
TJ  
1.0  
A
-65 to +175  
-65 to +175  
°C  
°C  
TSTG  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
MIN.  
TYP.  
0.95  
0.10  
8
MAX.  
Unit  
V
-
Forward voltage  
IF =1.0A  
VF  
1
-
-
-
-
Repetitive peak reverse current  
Junction capacitance  
VR =Max. VRRM, TA=25°C  
VR=4V, f=1.0MHZ  
IRRM  
CJ  
5
-
uA  
pF  
-
-
Junction to ambient (Note)  
Junction to lead (Note)  
RθJA  
RθJL  
65  
Thermal Resistance  
°C/W  
15  
Notes: Thermal resistance from junction to ambient and from junction to lead P.C.B. monuted on 0.2×0.2”(5.0*5.0mm) copper pad areas.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
AQW-JG001  
Comchip Technology CO., LTD.  

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