RoHS
ABSK22S THRU ABSK210S
COMPLIANT
肖特基桥式整流器Schottky Bridge Rectifier
■特征 Features
■外形尺寸 Outline Dimensions and Mark
●
●
●
Io
2.0A
VRRM
20V~100V
肖特基芯片
Schottky chip
●
●
耐正向浪涌电流能力高
High surge forward current capability
低正向电压
Low VF
■用途 Applications
●
作一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
ABSK
符号
Symbol Unit
单位
参数名称
Item
条件
Conditions
22S 24S 26S 28S 210S
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
A
20
40
60
80
100
60Hz正弦波,
电阻负载,Ta=40℃
60Hz sine wave,
R-load, Ta=40℃
平均整流输出电流
Average Rectified Output
Current
安装在氧化铝基板上
On alumina substrate
IO
2.0
正向(不重复)浪涌电流
Surge(Non-
repetitive)Forward Current
正向浪涌电流的平方对电流
60HZ正弦波,一个周期,Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
IFSM
A
50
1ms≤t<8.3ms Tj=25℃,单个二极管
1ms≤t<8.3ms Tj=25℃,Rating of per diode
I2t
A2S
浪涌持续时间的积分值
Current Squared Time
存储温度
6.6
Tstg
Tj
-55 ~+150
-55 ~+150
℃
℃
Storage Temperature
结温
Junction Temperature
■电特性 (T =25℃ 除非另有规定)
a
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
符号
单位
测试条件
最大值
Item
Symbol Unit
Test Condition
Max
IFM=1.0A, 脉冲测试,单个二极管的额定值IFM=1.0A,
正向峰值电压
Peak Forward Voltage
VFM
V
0.55
0.65
0.5
76
0.85
Pulse measurement, Rating of per diode
VRM=VRRM ,脉冲测试,单个二极管的额定值
VRM=VRRM , Pulse measurement, Rating of per diode
反向峰值电流
Peak Reverse Current
IRRM
mA
结和环境之间,安装在氧化铝基板上
Between junction and ambient, On alumina substrate
R
θJ-A
结和环境之间,安装在玻璃-环氧基板上
Between junction and ambient, On glass-epoxi
substrate
热阻
℃/W
134
20
Thermal Resistance
结和引线之间
Between junction and lead
R
θJ-L
扬州扬杰电子科技股份有限公司
S-S009
www.21yangjie.com
Rev. 1.3, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.