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AB28F800B5T90

更新时间： 2024-01-21 13:56:19
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
44页 344K
描述
5 VOLT BOOT BLOCK FLASH MEMORY

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中文翻译

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AB28F800B5T90 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：0.525 X 1.110 INCH, PLASTIC, SOP-44针数：44
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.35
Is Samacsys：N最长访问时间：90 ns
其他特性：MINIMUM 100K EXTENDED BLOCK ERASE CYCLES; CAN ALSO BE CONFIGURABLE AS 512KX16; TOP BOOT BLOCK启动块：TOP
JESD-30 代码：R-PDSO-G44长度：28.2 mm
内存密度：8388608 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：44字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：1MX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
编程电压：5 V认证状态：Not Qualified
座面最大高度：2.95 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
类型：NOR TYPE宽度：13.3 mm
Base Number Matches：1

AB28F800B5T90 数据手册

 浏览型号AB28F800B5T90的Datasheet PDF文件第2页浏览型号AB28F800B5T90的Datasheet PDF文件第3页浏览型号AB28F800B5T90的Datasheet PDF文件第4页浏览型号AB28F800B5T90的Datasheet PDF文件第6页浏览型号AB28F800B5T90的Datasheet PDF文件第7页浏览型号AB28F800B5T90的Datasheet PDF文件第8页 
E
28F200B5, 28F004/400B5, 28F800B5  
Product Overview  
1.0 INTRODUCTION  
1.1  
This datasheet contains specifications for 2-, 4-,  
and 8-Mbit 5 Volt Boot Block Flash memories.  
Section 1.0 provides a feature overview. Sections  
2.0, 3.0, and 4.0 describe the product and  
functionality. Section 5.0 details the electrical and  
timing specifications for both commercial and  
extended temperature operation. Finally, Sections  
6.0 and 7.0 provide ordering and reference  
information.  
The 5 Volt Boot Block Flash memory family  
provides pinout-compatible flash memories at the  
2-, 4-, and 8-Mbit densities. The 28F200B5,  
28F400B5, and 28F800B5 can be configured to  
operate either in 16-bit or 8-bit bus mode, with the  
data divided into individually erasable blocks. The  
28F004B5 provides 8-bit operation in a compact  
package.  
Table 1. 5 Volt Boot Block Flash Boot Block Family: Feature Summary  
Feature  
VCC Read Voltage  
VPP Prog/Erase Voltage  
Bus-width  
28F200B5  
28F400B5  
5 V ± 5%, 5 V ± 10%  
5 V ± 10% or 12 V ± 5%, auto-detected  
28F800B5  
28F004B5  
Reference  
Section 5.2  
Section 5.2  
Table 2  
8- or 16-bit  
8- or 16-bit  
8- or 16-bit  
70, 90  
8-bit  
60, 80  
80  
Speed (ns) Commercial  
Extended  
55(1), 80  
Section 5.6  
Section 5.6  
Section 5.7  
80  
80  
80  
80  
90  
Automotive  
80, 90  
N/A  
Memory Arrangement  
x8: 256K x 8  
x8: 512K x 8  
x8: 1M x 8  
x8: 512K x 8  
x16: 128K x 16 x16: 256K x 16 x16: 512K x 16  
Blocking  
Boot  
1 x 16 KB  
2 x 8 KB  
1 x 16 KB  
2 x 8 KB  
1 x 16 KB  
2 x 8 KB  
1 x 16 KB  
2 x 8 KB  
Section 2.3,  
Figs. 4-7  
Parameter  
Main  
1 x 96 KB  
1 x 96 KB  
1 x 96 KB  
1 x 96 KB  
1 x 128 KB  
3 x 128 KB  
7 x 128 KB  
3 x 128 KB  
Boot Location  
Locking  
Top or Bottom boot locations available  
Boot Block lockable using WP# and/or RP#  
All other blocks protectable using VPP switch  
Section 3.3  
Operating Temperature  
Commercial: 0 °C – +70 °C, Extended: –40 °C – +85 °C,  
Automotive –40 °C – +125 °C  
Section 5.2  
Erase Cycling  
100,000 cycles at Commercial, 10,000 cycles at Extended,  
30,000 cycles for parameter blocks and  
1,000 cycles for main and boot blocks at Automotive  
Packages  
44-PSOP, 48-TSOP  
40-TSOP  
Figs. 1-2  
NOTE:  
1. As of the publication date of this document, not all 28F200B5–60 devices meet the 55 ns read specification. Please refer  
to the 5 Volt Boot Block Flash Memory Family 28F200B5, 28F004/400B5, 28F800B5 Specification Update to determine  
the specific 28F200B5 –T/B60 material that is capable of 55 ns read access times. All other 28F200B5 T/B60 devices are  
capable of 60 ns read access times when VCC = 5 V ± 5% and 30 pF load.  
2. Automotive versions of this product are only available as 28F200B5, 28F400B5 and 28F800B5 and are only offered in the  
44-Lead PSOP package.  
5
PRELIMINARY  
12345678...44

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