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A8226 PDF预览

A8226

更新时间: 2024-11-30 08:43:15
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
6页 205K
描述
Current output, high UV sensitivity, excellent linearity, low power consumption

A8226 数据手册

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I M A G E S E N S O R  
NMOS linear image sensor  
S3901/S3904 series  
Current output, high UV sensitivity, excellent linearity, low power consumption  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active  
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output  
linearity and wide dynamic range.  
The photodiodes of S3901 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904 series also  
have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series: 128  
(S3901-128Q), 256 (S3901-256Q, S3904-256Q), 512 (S3901-512Q, S3904-512Q) and 1024 (S3904-1024Q). Quartz glass is the standard window  
material.  
Features  
Applications  
Wide active area  
Pixel pitch: 50 µm (S3901 series)  
Multichannel spectrophotometry  
Image readout system  
25 µm (S3904 series)  
Pixel height: 2.5 mm  
High UV sensitivity with good stability  
Low dark current and high saturation charge allow a long  
integration time and a wide dynamic range at room temperature  
Excellent output linearity and sensitivity spatial uniformity  
Lower power consumption: 1 mW max.  
Start pulse and clock pulses are CMOS logic compatible  
Equivalent circuit  
Active area structure  
Start st  
Degital shift register  
(MOS shift register)  
End of scan  
Active video  
Clock  
Clock  
1
2
Active  
photodiode  
Vss  
b
Saturation  
control gate  
Saturation  
control drain  
a
Dummy video  
Oxidation silicon  
Dummy diode  
KMPDC0020EA  
N type silicon  
P type silicon  
S3901 series: a=50 µm, b=45 µm  
S3904 series: a=25 µm, b=20 µm  
KMPDA0059EA  
Absolute maximum ratings  
Parameter  
Symbol  
Vφ  
P
Topr  
Tstg  
Value  
15  
1
-40 to +65  
-40 to +85  
Unit  
V
mW  
°C  
Input pulse (φ1, φ2, φst) voltage  
Power consumption*1  
Operating temperature*2  
Storage temperature  
*1: Vφ=5.0 V  
°C  
*2: No dew  
1

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