A64E16161
Preliminary
2M X 16 Bit Low Voltage Super RAMTM
Features
nOperating voltage: 1.65V to 2.2V
nAccess times:
Address Access , tAA = 70 ns (max.)
Page Mode Address Access, tPAA = 25ns (max)
nCurrent:
Operating Current (Icc2) : 20mA (max.)
Standby Current (Isb1) : 60uA (max)
Power Down Standby Current (Isb2) : 10mA (max.)
nFully SRAM compatible operation
nFull static operation, no clock or refreshing required
nAll inputs and outputs are directly TTL-compatible
nCommon I/O using three-state output
nSupport 3 distinct operation modes for reducing standby
power :
Reduced Memory Size Operation (8M,16M,24M,32M)
Partial Array Refresh (8M,16M,24M)
Deep Power Down Mode
nPage Mode Read/Write Operation by 8 words
nIndustrial operating temperature range: -25°C to +85°C
for -I
nAvailable in 48-ball CSP (6X8) package.
General Description
The A64E16161 is a low operating current 33,554,432-bit
Super RAM organized as 2,097,152 words by 16 bits and
operates on low power supply voltage from 1.65V to
2.2V. It is built using AMIC’s high performance CMOS
DRAM process.Using hidden refresh technique, the
A64E16161 provides a 100% compatible asynchronous
interface.
Inputs and three-state outputs are TTL compatible and allow
for direct interfacing with common system bus structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output enable
input are included for easy interfacing.
This A64E16161 is suited for low power application such as
mobile phone and PDA or other battery-operated handheld
device.
Pin Configuration
nMini BGA (6X8) Top View
1
2
3
4
5
6
A
B
C
D
E
F
A0
A1
A2
CE2
LB
OE
HB
I/O8
A3
A5
A4
A6
I/O0
I/O2
VCC
VSS
I/O6
I/O7
A20
CE1
I/O9
VSS
VCC
I/O14
I/O15
A18
I/O10
I/O1
I/O11
I/O12
I/O13
A19
A8
A17
GND
A14
A12
A9
A7
I/O3
I/O4
I/O5
A16
A15
A13
A10
G
H
WE
A11
A64E16161G
PRELIMINARY
(December, 2002, Version 0.0)
AMIC Technology, Corp.