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A63L8336E-2.6F

更新时间： 2024-01-10 12:49:49
品牌 Logo 应用领域
联笙电子 - AMICC 计数器内存集成电路静态存储器时钟
页数 文件大小 规格书
17页 257K
描述
256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

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A63L8336E-2.6F 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：QFP, QFP100,.63X.87Reach Compliance Code：unknown
风险等级：5.84最长访问时间：2.6 ns
最大时钟频率 (fCLK)：250 MHzI/O 类型：COMMON
JESD-30 代码：R-PQFP-G100内存密度：9437184 bit
内存集成电路类型：STANDARD SRAM内存宽度：36
端子数量：100字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：256KX36输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：QFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
电源：3.3 V认证状态：Not Qualified
最大待机电流：0.15 A最小待机电流：3.14 V
子类别：SRAMs最大压摆率：0.4 mA
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：0.635 mm
端子位置：QUADBase Number Matches：1

A63L8336E-2.6F 数据手册

 浏览型号A63L8336E-2.6F的Datasheet PDF文件第8页浏览型号A63L8336E-2.6F的Datasheet PDF文件第9页浏览型号A63L8336E-2.6F的Datasheet PDF文件第10页浏览型号A63L8336E-2.6F的Datasheet PDF文件第12页浏览型号A63L8336E-2.6F的Datasheet PDF文件第13页浏览型号A63L8336E-2.6F的Datasheet PDF文件第14页 
A63L8336  
AC Characteristics (continued)  
Symbol  
Parameter  
-2.6  
-2.8  
-3.2  
-3.5  
-3.8  
-4.2  
Unit Note  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Hold Times  
tAH  
Address  
0.3  
0.3  
-
-
0.4  
0.4  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
ns  
ns  
7, 9  
7, 9  
tADVH  
Address Status  
( ADSC , ADSP )  
tAAH  
tWH  
Address Advance  
( ADV )  
0.3  
0.3  
-
-
0.4  
0.4  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
ns  
ns  
7, 9  
7, 9  
Write Signal  
(BW1, BW2 , BW3 ,  
BW4 , BWE , GW )  
tDH  
Data-in  
0.3  
0.3  
-
-
0.4  
0.4  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
0.5  
0.5  
-
-
ns  
ns  
7, 9  
7, 9  
tCEH  
Chip Enable  
( CE , CE2, CE2 )  
Notes:  
1. All voltages refer to GND.  
2. Overshoot: VIH ≤ +4.6V for t ≤ tKC/2.  
Undershoot: VIH ≥ -0.7V for t ≤ tKC/2.  
Power-up: VIH ≤ +3.6 and VCC ≤ 3.1V  
for t ≤ 200ms  
3. ICC is given with no output current. ICC increases with greater output loading and faster cycle times.  
4. Test conditions assume the output loading shown in Figure 1, unless otherwise specified.  
5. For output loading, CL = 5pF, as shown in Figure 2. Transition is measured ±150mV from steady state voltage.  
6. At any given temperature and voltage condition, tKQHZ is less than tKQLZ and tOEHZ is less than tQELZ.  
7. A WRITE cycle is defined by at least one Byte Write enable LOW and ADSP HIGH for the required setup and hold  
times. A READ cycle is defined by all byte write enables HIGH and ( ADSC or ADV LOW) or ADSP LOW for the  
required setup and hold times.  
8. OE has no effect when a Byte Write enable is sampled LOW.  
9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK  
when either ADSP or ADSC is LOW and the chip is enabled. All other synchronous inputs must meet the setup and  
hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be  
valid at each rising edge of CLK when either ADSP or ADSC is LOW to remain enabled.  
10. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the given DC values.  
AC I/O curves are available upon request.  
11. "Device Deselected" means device is in POWER-DOWN mode, as defined in the truth table. "Device Selected" means  
device is active (not in POWER-DOWN mode).  
12. MODE pin has an internal pulled-up, and ZZ pin has an internal pulled-down. All of then exhibit an input leakage  
current of 10µA.  
13. Snooze (ZZ) input is recommended that users plan for four clock cycles to go into SLEEP mode and four clocks to  
emerge from SLEEP mode to ensure no data is lost.  
PRELIMINARY  
(July, 2005, Version 0.0)  
10  
AMIC Technology, Corp.  
1...891011121314...17

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