Datasheet > A63L8336

A63L8336

更新时间： 2022-12-11 20:57:55

品牌	Logo	应用领域
联笙电子 - AMICC		计数器静态存储器
页数	文件大小	规格书
17页	257K
描述
256K X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output

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A63L8336 数据手册

A63L8336

DC Electrical Characteristics

(0°C ≤ TA ≤ 70°C, VCC, VCCQ = 3.3V+10% or 3.3V-5%, unless otherwise noted)

Symbol

⏐ILI⏐

Parameter

Min.

Max.

±2.0

Unit

µA

Test Conditions

All inputs VIN = GND to VCC

OE = VIH, Vout = GND to VCC

Device selected; VCC = max.

Note

Input Leakage Current

Output Leakage Current

⏐ILO⏐

µA

I^CC1

Supply Current

Standby Current

400

180

Iout = 0mA, all inputs = VIH or VIL

Cycle time = t^KCmin.

3, 11

Device deselected; VCC = max.

All inputs are fixed.

All inputs ≥ VCC - 0.2V

or ≤ GND + 0.2V

I^SB1

Cycle time = t^KCmin.

ISB2

VOL

VOH

150

0.4

ZZ ≥ VCC - 0.2V

IOL = 8 mA

Output Low Voltage

Output High Voltage

2.4

IOH = -4 mA

Capacitance

Symbol

CIN

Parameter

Input Capacitance

Input/Output Capacitance

Typ.

Max.

Unit

Conditions

T^A= 25 C; f = 1MHz

VCC = 3.3V

CI/O

* These parameters are sampled and not 100% tested.

PRELIMINARY

(July, 2005, Version 0.0)

AMIC Technology, Corp.

1...6 7 8910 11 12...17

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