Datasheet > A62S6316G-55SIF

A62S6316G-55SIF

更新时间： 2022-12-01 23:21:57

品牌	Logo	应用领域
联笙电子 - AMICC		静态存储器
页数	文件大小	规格书
14页	187K
描述
Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI BGA-48

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数据手册

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A62S6316G-55SIF 数据手册

A62S6316 Series

AC Test Conditions

Input Pulse Levels

0V to 2.4V

5 ns

Input Rise And Fall Time

Input and Output Timing Reference Levels

Output Load

1.5V

See Figures 1 and 2

TTL

30pF

5pF

* Including scope and jig.

Figure 1. Output Load

Figure 2. Output Load for t^CLZ, tOLZ,

t^CHZ, tOHZ, tWHZ, and tOW

Data Retention Characteristics (TA = 0°C to 70°C or -25°C to 85°C)

Symbol

Parameter

Min.

Max.

Unit

Conditions

VDR

VCC for Data Retention

2.0

3.3

CE ≥ VCC - 0.2V

ICCDR

S-Version

SI-Version

10*

VCC = 2.0V,

CE ≥ VCC - 0.2V

V^IN≥ 0V

Data Retention Current

µA

20**

tCDR

Chip Disable to Data Retention Time

Operation Recovery Time

TRC

See Retention Waveform

tVR

VCC Rise Time from Data Retention

Voltage to Operating Voltage

* A62S6316-55S/70S

** A62S6316-55SI/70SI

ICCDR: max. 3µA at TA = 0°C to + 40°C

I^CCDR: max. 3µA at TA = 0°C to + 40°C

(August, 2004, Version 1.1)

AMIC Technology, Corp.

1...8 9 101112 13 14

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